2SD1530.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1530 데이타시트 다운로드

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1530
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Good Linearity of hFE
·High Speed Switching
APPLICATIONS
·Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
130 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 3 A
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
6A
30
W
2
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1530
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.1A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.1A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
0.5 V
1.2 V
10 μA
50 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
hFE-2
DC Current Gain
i.cnfT Current-Gain—Bandwidth Product
.iscsemSwitching times
wwwton Turn-on Time
IC= 1A; VCE= 2V
IC= 0.5A; VCE= 10V; f= 10MHz
60
tstg Storage Time
IC= 2A; IB1= -IB2= 0.1A;
VCC= 50V
25
tf Fall Time
260
MHz
0.5 μs
1.5 μs
0.5 μs
‹ hFE-2 classifications
RQP
60-120 90-180 130-260
isc Websitewww.iscsemi.cn
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