2SD1576.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1576 데이타시트 다운로드

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1576
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCES
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector- Emitter Voltage
wwwCollector-Emitter Voltage
VALUE UNIT
1500
V
1500
V
700 V
Emitter-Base Voltage
6V
IC Collector Current- Continuous
2A
ICM Collector Current-Peak
6A
IBM Base Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2.5 A
2.5
W
80
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1576
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 1A
5.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 1A
1.5 V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
ICBO Collector Cutoff Current
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
hFE DC Current Gain
IC= 2A; VCE= 5V
2
fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 0.5MHz
i.cnSwitching times
.iscsemtstg Storage Time
wwwtf Fall Time
IC= 2.5A , IB= 1.1A; LB= 10μH
2
V
50 μA
1.0 mA
MHz
9.0 μs
1.0 μs
isc Websitewww.iscsemi.cn
2