2SD1602.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1602 데이타시트 다운로드

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1602
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 2A
·Complement to Type 2SB1102
APPLICATIONS
·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
80 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
ICP Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
8A
40 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1602
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE=
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 4mA
1.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 40mA
3.0 V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB=B 4mA
2.0 V
VBE(sat)-2
ICBO
ICEO
hFE
VECF
Base-Emitter Saturation Voltage
IC= 4A; IB=B 40mA
Collector Cutoff Current
i.cnCollector Cutoff Current
.iscsemDC Current Gain
wwwC-E Diode Forward Voltage
VCB= 60V; IE= 0
VCE= 50V; RBE=
IC= 2A; VCE= 3V
IF= 4A
1000
Switching times
3.5 V
100 μA
10 μA
20000
3.0 V
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 2A, IB1= -IB2= 4mA
1.0 μs
6.0 μs
1.0 μs
isc Websitewww.iscsemi.cn
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