2SD1730.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1730 데이타시트 다운로드

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1730
DESCRIPTION
·High Voltage
·High Switching Speed
·Built-in damper diode
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
VCES
VCEO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwCollector-Emitter Voltage
VALUE UNIT
1500
V
1500
V
700 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICP Collector Current-Peak
15 A
IBB Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
2A
100 W
150
Tstg Storage Temperature Range
-55-150
isc Websitewww.iscsemi.cn

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1730
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1A
8.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 1A
1.5 V
hFE DC Current Gain
IC= 1A; VCE= 5V
5 25
VCB= 750V; IE= 0
ICBO Collector Cutoff Current
VCB= 1500V; IE= 0
VECF
C-E Diode Forward Voltage
i.cnfT Transition Frequency
.iscsemSwitching Times, Resistive Load
wwwts Storage Time
IF= 5A
IC= 1A; VCE= 10V
IC= 4A; IB1= 0.8A; IB2= -1.6A,
VCC= 200V
2
1.5
tf Fall Time
0.2
10 μA
1.0 mA
2.3 V
MHz
μs
μs
isc Websitewww.iscsemi.cn