INJ0003Ax.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 INJ0003Ax 데이타시트 다운로드

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・PRELIMINARY
Notice: This is not a final specification
Some parametric are subject to change.
INJ0003AX SERIES
High speed switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0003AX is a Silicon P-channel MOSFET.
This product is most suitable for low voltage
use such as portable machinery , because of low
voltage drive and low on resistance.
OUTLINE DRAWING
INJ0003AT2
0.2 0.8 0.2
Unit:mm
INJ0003AM1
2.1
0.425 1.25 0.425
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=-0.6~-1.2V
・Low on Resistance. Ron=2Ω(TYP)
・High speed switching.
・Small package for easy mounting.
②③
②③
APPLICATION
high speed switching , Analog switching
www.DataSheet4U.coEmQUIVALENT CIRCUIT
D
G
S
JEITA, JEDEC:-
ISAHAYA:T-USM
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INJ0003AU1
1.6
0.4 0.8 0.4
②③
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INJ0003AC1
2.5
0.5 1.5 0.5
②③
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
JEITA:SC-59
JEDEC:Similar to TO-236
T TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
ISAHAYA ELECTRONICS CORPORATION

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・PRELIMINARY
Notice: This is not a final specification
Some parametric are subject to change.
INJ0003AX SERIES
High speed switching
Silicon P-channel MOSFET
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
DSS
GSS
D
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Total power
(Ta=25℃)
dissipation
Channel temperature
Range of Storage temperature
INJ0003AT2
125(※)
+125
-55~+125
RATING
INJ0003AU1 INJ0003AM1
-20
±8
-200
INJ0003AC1
150 200
+150
-55~+150
UNIT
V
V
mA
mW
ELECTRICAL CHARACTERISTICS(Ta=25℃)
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL
PARAMETER
TEST CONDITION
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
tON
tOFF
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
Output capacitance
Switching time
I D=-100μA, VGS=0V
V GS=±5V, VDS=0V
V DS=-20V ,VGS=0V
I D=-250μA, V DS= V GS
V DS=-10V, I D=-0.1A
I D=-100mA, V GS=-4.0V
V DS=-10V, V GS=0V,f=1MHz
V DS=-10V, V GS=0V,f=1MHz
V DD=-5V , I D=-10mA
V GS=0~-5V
LIMIT
MIN TYP MAX
-20 -
-
- - ±0.5
- - -50
-0.6 - -1.2
- 280 -
-2-
- 37 -
- 12 -
- 16 -
- 110 -
UNIT
V
μA
μA
V
mS
Ω
pF
pF
ns
Switching time test condition
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test circuit
0 IN
-5V 50Ω
10μs
VDD=-5V
D.U.1%
Common source
Ta=25
OUT
0V
input
RL waveform
VDD -5V
VDS(ON
output
waveform
VDD
10%
90%
90%
10%
tr
tf
ton toff
ISAHAYA ELECTRONICS CORPORATION

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TYPICAL CHARACTERISTICS
Ta=25℃
-100
-1.6V
-1.5V
-80
ID -VDS
-1.4V
-1.3V
-60 -1.2V
-40 -1.1V
-20 VGS=-1.0V
-0
-0
-2 -4 -6 -8
Drain-Source voltage VDS (V)
-10
Ta=25℃
-5
-1.0V
-4
-3
-2
-1
ID -VDS(Low voltage region)
-0.95V
-0.9V
-0.85V
VGS=-0.8V
-0
-0
-0.1 -0.2 -0.3 -0.4
Drain-Source voltage VDS (V)
-0.5
-100
Ta=25℃
VGS=0V
-10
IDR -VDS
-1000
Ta=25℃
VDS=-10V
-100
-10
ID -VGS
-1
0
0.5 1 1.5
Drain-Source voltage VDS (V)
1000
Ta=25℃
VDS=-10V
100
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10
|Yfs| - ID
-1
2 -0 -1 -2 -3 -4
Gate-Source voltage VGS (V)
-1000
Ta=25℃
VGS=-4V
-100
VDS(ON) -ID
-5
-10
1
-1
10000
1000
toff
tf
-10 -100
Drain current ID (mA)
-1000
t - ID
Ta=25℃
-1
-1
100
-10
Drain current ID (mA)
C - VDS
-100
Ciss
100
ton
10
tr
1
-0.1
-1 -10
Drain current ID (mA)
-100
10
Coss
Ta=25℃
VGS=0V
1
-0.1
-1 -10
Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION

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Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
www.DataSheet4U.com
Keep safety first in your circuit designs!
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Apr.2007