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2SK3446
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
RDS (on) = 1.5 typ. (at VGS = 4 V)
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92MOD)
www.DataSheet4U.com
321
G
REJ03G1100-0800
(Previous: ADE-208-1566F)
Rev.8.00
Sep 07, 2005
D
1. Source
2. Drain
3. Gate
S
Rev.8.00 Sep 07, 2005 page 1 of 6

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2SK3446
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Ta = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
150
±10
1
4
1
0.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
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Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS 150
V ID = 10 mA, VGS = 0
V (BR) GSS
±10
V IG = ±100 µA, VDS = 0
IGSS — — ±10 µA VGS = ±8 V, VDS = 0
IDSS — — 1 µA VDS = 150 V, VGS = 0
VGS (off)
0.5
— 1.5
V VDS = 10 V, ID = 1 mA
RDS (on)
1.5 1.95
ID = 0.5 A, VGS = 4 V Note 3
RDS (on) — 1.9 2.5 ID = 0.5 A, VGS = 2.5 V Note 3
|yfs|
0.8 1.4 —
S ID = 0.5 A, VDS = 10 V Note 3
Ciss
— 98 — pF VDS = 10 V
Coss
— 31 — pF VGS = 0
Crss
— 14 — pF f = 1 MHz
Qg
Qgs
Qgd
— 3.5 — nC VDD = 100 V
— 0.5 — nC VGS = 4 V
— 1.8 — nC ID = 1 A
td (on)
tr
td (off)
tf
VDF
trr
— 8 — ns VGS = 4 V
— 12 — ns ID = 0.5 A
— 34 — ns RL = 60
— 19 — ns
— 1.0 1.5 V IF = 1 A, VGS = 0
— 60 — ns IF = 1 A, VGS = 0
diF/dt = 100 A/µs
Rev.8.00 Sep 07, 2005 page 2 of 6

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2SK3446
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.5
Pulse Test
2.0 4 V
3V
1.5
2.5 V
2V
1.0
0.5 VGS = 1.5 V
0
0 2 4 6 8 10
www.DataSheet4U.com Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
3
Pulse Test
2
ID = 1 A
1 0.5 A
0.2 A
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.8.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
3
1
0.3
0.1
0.03
0.01
10 µs
PW
DC Operation
Operation in
this area is
= 10 ms (1shot)
(Tc = 25°C)
limited by RDS(on)
100 µs
1 ms
0.003
Ta = 25°C
0.001
0.1 0.3 1 3 10 30 100 500
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
Tc = –25°C
25°C
75°C
2
1
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
VGS = 2.5 V
2
1 4V
0.5
0.2
0.1
0.1
0.3 1 3
Drain Current ID (A)
10

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2SK3446
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
0.2 A
0.5 A
3 ID = 1 A
VGS = 2.5 V
2
1
4V
0.2 A
0.5 A
ID = 1 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
300
100
30
10
3
1
0.1 0.3 1 3 10
Reverse Drain Current IDR (A)
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Dynamic Input Characteristics
160
ID = 1 A
8
120
VDS
80
VDD = 100 V
50 V
25 V
VGS
40
VDD = 100 V
50 V
25 V
0
02 468
Gate Charge Qg (nC)
6
4
2
0
10
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = –25°C
1
0.3
75°C
0.1
25°C
0.03
0.01
0.01 0.03 0.1 0.3
VDS = 10 V
Pulse Test
1 3 10
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
300
100
Ciss
VGS = 0
f = 1 MHz
30 Coss
10
3 Crss
1
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
30
tf
10
td(off)
tr
td(on)
3
VGS = 4 V, VDD = 30 V
PW = 5 µs, duty 1 %
1
0.1 0.3
13
10
Drain Current ID (A)
Rev.8.00 Sep 07, 2005 page 4 of 6

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2SK3446
Reverse Drain Current vs.
Source to Drain Voltage
4
Pulse Test
3
2
5V
VGS = 0, –5 V
1
Gate to Source Cutoff Voltage
vs. Case Temperature
1.5
VDS = 10 V
Pulse Test
1.0
ID = 10 mA
0.5 1 mA
0.1 mA
0
01 2
Source to Drain Voltage VSDF (V)
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
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0.2
0.1
0.1 0.05
0.02
0.01
1shot
pulse
0.01
10 µ 100 µ
1m
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
PDM
D = PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin
4V
50
VDD
= 30 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.8.00 Sep 07, 2005 page 5 of 6