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DATA SHEET
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
400 and 600 V high-withstanding-voltage series of products
The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
High-sensitivity thyristor (IGT = 3 to 50 µA)
Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
PACKAGE DRAWING (Unit: mm)
φ 5.2 MAX.
Electrode connection
1: Gate
2: Anode
3: Cathode
0.5
1.27
*TC test bench-mark
Standard weight: 0.3 g
2.54
123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
03P4MG
03P6MG
Non-repetitive Peak Reverse Voltage
VRSM
700
700
Non-repetitive Peak Off-state Voltage
www.DataSheReet4pUet.ictiovme Peak Reverse Voltage
VDSM
VRRM
700
400
700
600
Repetitive Peak Off-state Voltage
VDRM
400
600
Average On-state Current
IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°)
Effective On-state Current
5 Surge On-state Current
Fusing Current
IT(RMS)
ITSM
iT2dt
470
8 (f = 50 Hz, Sine half-wave, 1 cycle)
0.15 (1 ms t 10 ms)
Critical Rate of On-state Current of Rise dIT/dt
20
Peak Gate Power Dissipation
PGM 100 (f 50 Hz, Duty 10%)
Average Gate Power Dissipation
PG(AV)
10
Peak Gate Forward Current
IFGM 100 (f 50 Hz, Duty 10%)
Peak Gate Reverse Voltage
VRGM
6
Junction Temperature
Tj 40 to +125
Storage Temperature
Tstg 55 to +150
Unit Remarks
V RGK = 1 k
V RGK = 1 k
V RGK = 1 k
V RGK = 1 k
mA Refer to Figure 10.
mA
A Refer to Figure 2.
A2s
A/µs
mW Refer to Figure 3.
mW Refer to Figure 3.
mA
V
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002

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03P4MG,03P6MG
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 k)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN. TYP. MAX.
Non-repetitive Peak Reverse
Current
Non-repetitive Peak Off-state
Current
Critical Rate-of-rise of Off-state
Voltage
IRRM VRM = VRRM
Tj = 25°C
Tj = 125°C
IDRM VDM = VDRM
Tj = 25°C
dVD/dt
Tj = 125°C
Tj = 125°C, VDM = 2 VDRM
3
10
10 µA
100 µA
10 µA
100 µA
− − V/µs
On-state Voltage
Gate Trigger Current
VT IT = 4 A
IGT VDM = 6 V, RL = 100
− − 2.2 V Refer to Figure 1.
3 50 µA
Gate Trigger Voltage
Gate Non-trigger Voltage
VGT VDM = 6 V, RL = 100
VGD Tj = 125°C, VDM = VDRM
2
− − 0.8 V
0.2 − − V
Holding Current
IH VDM = 24 V, ITM = 4 A
− − 5 mA
Turn-off Time
tq Tj = 125°C, IT = 200 mA,
60 µs
dIR/dt = 15 A/µs, VR 25 V,
VDM
=
2
3
VDRM,
dVD/dt
=
10
V/µs
Thermal Resistance
Rth(j-C) Junction-to-case DC
− − 50 °C/W Refer to Figure 14.
Rth(j-A) Junction-to-ambient DC
− − 230 °C/W Refer to Figure 14.
TYPICAL CHARACTERISTICS (TA = 25°C)
10000
Figure 1. iT vs. υT Characteristics
MAX.
www.DataSheet4U.com
1000
Tj = 125˚C
100
25˚C
10
012
On-state Voltage υT (V)
3
14
12
10
8
6
4
2
0
1
Figure 2. ITSM Rating
At initial, Tj = 125˚C
ITSM
10 ms 20 ms
5 10
Cycles (N)
50 100
2 Data Sheet D15290EJ4V0DS

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03P4MG,03P6MG
Figure 3. Gate Rating
5.0
4.0
3.0
PGM = 100 mW
2.0
PG(AV) = 10 mW
1.0
0
0
IFG = 100 mA
20 40 60 80 100
Gate Forward Current IFG (mA)
120
Figure 4. Example of Gate Characteristics
1.2
1.0
0.8
25˚C
0.6
0˚C
Tj = 40˚C
0.4
0.2
0
0 50 100 150 200 250 300 350
Gate Trigger Current IGT (µA)
Figure 5. IGT vs. TA Example of Characteristics
100
10
1
www.DataSheet40U.1.com
40 20 0 20 40 60 80 100 120 140
Ambient Temperature TA (°C)
Figure 6. VGT vs. TA Example of Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
40 20 0 20 40 60 80 100 120 140
Ambient Temperature TA (°C)
Figure 7. iGS vs. τ Example of Characteristics
10
TA = 25˚C
5 iGS
RGK
1 k
1
0.5
Figure 8. υGT vs. τ Example of Characteristics
1.0
TA = 25˚C
0.8
0.6
0.4
0.2
0.1
1
10 100
Pulse Width τ (µs)
1000
0
1 10 100 1000
Pulse Width τ (µs)
Data Sheet D15290EJ4V0DS
3