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VLMSY3420
Vishay Semiconductors
Bicolor SMD LED PLCC-4
19211
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
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The package of the VLMSY3420 is the PLCC-4.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
• EIA and ICE standard package
e3
• Compatible with automatic placement
equipment
• Compatible with IR reflow, vapor phase and wave
soldering processes according to CECC 00802 and
J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin 1.6
• Lead (Pb)-free device
• Preconditioning: according to JEDEC level 2a
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• ESD-withstand voltage: up to 2 kV according to
JESD22-A114-B
• Automotive qualified AEC-Q101
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART
VLMSY3420-GS08
VLMSY3420-GS18
COLOR, LUMINOUS INTENSITY
Red, IV = (224 to 900) mcd
Yellow, IV = (280 to 1120) mcd
Red, IV = (224 to 900) mcd
Yellow, IV = (280 to 1120) mcd
TECHNOLOGY
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 81305
Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
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VLMSY3420
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS 1) VLMSY3420
PARAMETER
Reverse voltage per diode 2)
DC Forward current per diode
TEST CONDITION
IR = 10 µA
Tamb 65 °C
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
1 chip on
2 chips on
Note:
1) Tamb = 25 °C, unless otherwise specified
2) Driving the LED in reverse direction is suitable for short term application
SYMBOL
VR
IF
IFSM
PV
Tj
Tamb
Tstg
RthJA
VALUE
5
50
0.1
130
125
- 40 to + 100
- 40 to + 100
480
650
UNIT
V
mA
A
mW
°C
°C
°C
K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, SUPERRED
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
TYP.
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse current
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
VR = 5 V,
VLMSY3420
IV
λd
λp
ϕ
VF
IR
224
630
643
± 60
2.1
Junction capacitance
VR = 0 V, f = 1 MHz
Note:
1) Tamb = 25 °C, unless otherwise specified
Cj 15
MAX.
900
2.6
10
UNIT
mcd
nm
nm
deg
V
µA
pF
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMSY3420, YELLOW
PARAMETER
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Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
TEST CONDITION
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
PART
VLMSY3420
SYMBOL
IV
λd
λp
ϕ
VF
MIN.
280
581
TYP.
588
590
± 60
2.1
Reverse current
VR = 5 V,
Junction capacitance
VR = 0 V, f = 1 MHz
Note:
1) Tamb = 25 °C, unless otherwise specified
IR
Cj 15
MAX.
1120
594
2.6
10
UNIT
mcd
nm
nm
deg
V
µA
pF
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For technical support, please contact: LED@vishay.com
Document Number 81305
Rev. 1.3, 10-Jul-08

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VLMSY3420
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS 1) VLMSY3420
T1
280 to 355 mcd
Y T2
E 355 to 450 mcd
L U1
L 450 to 560 mcd
O U2
W 560 to 710 mcd
V1
710 to 900 mcd
V2
900 to 1120 mcd
S2
224 to 280 mcd
T1
280 to 355 mcd
RED
T2 U1
355 to 450 mcd 450 to 560 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
U2
560 to 710 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
V1
710 to 900 mcd
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
VLMSY3420
Note:
1) Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %
COLOR CLASSIFICATION
GROUP
1
2
3
4
5
6
MIN.
581
583
585
587
589
591
DOMINANT WAVELENGTH (nm)
YELLOW
MAX.
584
586
588
590
592
594
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TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
60
50
1 chip on
40
2 chips on
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100 110 120
20087
Tamb -Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
0.12
0.10
0.08
0.06
tp/T = 0.005
0.05
0.5
0.04
0.02 for one chip
operation only
0.00
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 101 102
20085
tp - Pulse Length (s)
Figure 2. Forward Current vs. Pulse Duration
Document Number 81305
Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
www.vishay.com
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VLMSY3420
Vishay Semiconductors
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
8
95 10319 0.6 0.4 0.2 0
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
1.2
yellow
1.0
0.8
0.6
0.4
0.2
0.0
540
16008
560 580 600 620
λ - Wavelength (nm)
640
Figure 4. Relative Intensity vs. Wavelength
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1.2
1.0 super red
0.8
0.6
0.4
0.2
0.0
600 620 640 660 680 700
17045_1
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
100
90
80
superred
yellow
70
60
50
40
30
20
10
20090
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
VF - Forward Voltage (V)
Figure 6. Relative Forward Voltage vs. Ambient Temperature
10
yellow
1
0.1
0.01
1
10 100
17018
I - Forward Current (mA)
F
Figure 7. Relative Luminous Intensity vs. Forward Current
10
super red
1
0
0.01
1
17042
10
IF - Forward Current (mA)
100
Figure 8. Relative Luminous Intensity vs. Forward Current
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For technical support, please contact: LED@vishay.com
Document Number 81305
Rev. 1.3, 10-Jul-08

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2.5
yellow
2.0
1.5
1.0
0.5
0.0
- 50
17016
- 25 0 25 50 75 100
Tamb - Ambient Temperature (°C)
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
2.5
superred
2.0
1.5
1.0
0.5
0.0
- 50
20089
- 25 0 25 50 75
Tamb - Ambient Temperature (°C)
100
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
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yellow
4
2
0
-2
-4
-6
- 50
17017
- 25 0 25 50 75
Tamb - Ambient Temperature (°C)
100
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
VLMSY3420
Vishay Semiconductors
3
superred
2
1
0
-1
-2
-3
-4
-5
- 50 - 25
0
25 50 75 100
20088
Tamb - Ambient Temperature (°C)
Figure 12. Change of Dominant Wavelength vs.
Ambient Temperature
250
30 mA
200
50 mA
150
yellow
100
50
10 mA
0
- 50
- 100
- 150
- 200
- 50
17015
- 25 0 25 50 75 100
Tamb - Ambient Temperature (°C)
Figure 13. Change of Forward Voltage vs. Ambient Temperature
250
200
30 mA
150
super red
100
50
0 10 mA
50 mA
- 50
- 100
- 150
- 200
- 50
17039_1
- 25 0 25 50 75 100
Tamb - Ambient Temperature (°C)
Figure 14. Change of Forward Voltage vs. Ambient Temperature
Document Number 81305
Rev. 1.3, 10-Jul-08
For technical support, please contact: LED@vishay.com
www.vishay.com
5