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FSBS5CH60
Smart Power Module
April 2005
SPM TM
Features
• UL Certified No.E209204(SPM27-BA package)
• 600V-5A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine.
General Description
It is an advanced smart power module (SPMTM) that Fairchild
has newly developed and designed to provide very compact
and high performance ac motor drives mainly targeting low-
power inverter-driven application like air conditioner and wash-
ing machine. It combines optimized circuit protection and drive
matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out and short-
circuit protection. The high speed built-in HVIC provides opto-
coupler-less single-supply IGBT gate driving capability that fur-
ther reduce the overall size of the inverter system design. Each
phase current of inverter can be monitored separately due to
the divided negative dc terminals.
Top View
44mm
Bottom View
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26.8mm
Figure 1.
©2005 Fairchild Semiconductor Corporation
FSBS5CH60 Rev. C
1
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Integrated Power Functions
• 600V-5A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 10 and 11.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger inpu
Pin Configuration
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(1) VCC(L)
(2) COM
(3) IN(UL)
(4) IN(VL)
(5) IN(WL)
(6) VFO
(7) CFOD
(8) CSC
(9) IN(UH)
(10) VCC(UH)
(11) VB(U)
(12) VS(U)
(13) IN(VH)
(14) VCC(VH)
(15) VB(V)
(16) VS(V)
(17) IN(WH)
(18) VCC(WH)
(19) VB(W)
(20) VS(W)
Top View
13.3
19.1
(21) NU
(22) NV
(23) NW
(24) U Case Temperature (TC)
Detecting Point
(25) V
(26) W
(27) P
Ceramic Substrate
Figure 2.
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FSBS5CH60 Rev. C

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Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
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Pin Name
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
CFOD
CSC
IN(UH)
VCC(UH)
VB(U)
VS(U)
IN(VH)
VCC(VH)
VB(V)
VS(V)
IN(WH)
VCC(WH)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
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FSBS5CH60 Rev. C

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Internal Equivalent Circuit and Input/Output Pins
(19) VB(W )
(18) VCC(W H)
(17) IN(W H)
(20) VS(W )
(15) VB(V)
(14) VCC(VH)
(13) IN(VH)
(16) VS(V)
(11) VB(U)
(10) VCC(UH)
(9) IN(UH)
(12) VS(U)
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
P (27)
W (26)
V (25)
U (24)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(W L)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
C(SC) OUT(W L)
C(FOD)
VFO
IN(W L) OUT(VL)
IN(VL)
IN(UL)
COM
VCC
OUT(UL)
VSL
NW (23)
NV (22)
NU (21)
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
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FSBS5CH60 Rev. C

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Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
Rating
Unit
VPN
VPN(Surge)
VCES
± IC
± ICP
PC
TJ
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Applied between P- NU, NV, NW
Applied between P- NU, NV, NW
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
TC = 25°C per One Chip
(Note 1)
450
500
600
5
10
25
-20 ~ 125
V
V
V
A
A
W
°C
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC 100°C). However, to insure safe operation of the SPM, the average
junction temperature should be limited to TJ(ave) 125°C (@TC 100°C)
Control Part
Symbol
Parameter
Conditions
Rating Units
VCC Control Supply Voltage
Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) -
COM
20
V
VBS High-side Control Bias
Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
20 V
VIN Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
IN(WL) - COM
-0.3~17
V
VFO Fault Output Supply Voltage Applied between VFO - COM
-0.3~VCC+0.3
V
IFO Fault Output Current
Sink Current at VFO Pin
5 mA
VSC Current Sensing Input Voltage Applied between CSC - COM
-0.3~VCC+0.3
V
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
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TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Condition
VCC = VBS = 13.5 ~ 16.5V
TJ = 125°C, Non-repetitive, less than 2µs
-20°C TJ 125°C, See Figure 2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to ceramic substrate
Rating
400
-20 ~ 100
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Inverter IGBT part (per 1/6 module)
Resistance
Inverter FWD part (per 1/6 module)
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
3.9
5.3
Units
°C/W
°C/W
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FSBS5CH60 Rev. C