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MCP6291/2/3/4/5
1.0 mA, 10 MHz Rail-to-Rail Op Amp
Features
• Gain Bandwidth Product: 10 MHz (typ.)
• Supply Current: IQ = 1.0 mA
• Supply Voltage: 2.4V to 5.5V
• Rail-to-Rail Input/Output
• Extended Temperature Range: -40°C to +125°C
• Available in Single, Dual and Quad Packages
• Single with Chip Select (CS) (MCP6293)
• Dual with Chip Select (CS) (MCP6295)
Applications
• Automotive
• Portable Equipment
• Photodiode Amplifier
• Analog Filters
• Notebooks and PDAs
• Battery-Powered Systems
Available Tools
• SPICE Macro Model (at www.microchip.com)
• FilterLab® Software (at www.microchip.com)
Description
The Microchip Technology Inc. MCP6291/2/3/4/5 family
of operational amplifiers (op amps) provide wide
bandwidth for the current. This family has a 10 MHz
Gain Bandwidth Product (GBWP) and a 65° phase
margin. This family also operates from a single supply
voltage as low as 2.4V, while drawing 1 mA (typ.)
quiescent current. In addition, the MCP6291/2/3/4/5
supports rail-to-rail input and output swing, with a
common mode input voltage range of VDD + 300 mV to
VSS – 300 mV. This family of operational amplifiers is
designed with Microchip’s advanced CMOS process.
The MCP6295 has a Chip Select input (CS) for dual op
amps in an 8-pin package. This device is manufactured
by cascading the two op amps, with the output of
op amp A being connected to the non-inverting input of
op amp B. The CS input puts the device in a Low-power
mode.
The MCP6291/2/3/4/5 family operates over the
Extended Temperature Range of -40°C to +125°C. It
also has a power supply range of 2.4V to 5.5V.
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Package Types
MCP6291
PDIP, SOIC, MSOP
NC 1
8 NC
VIN_ 2 -
7 VDD
VIN+ 3 +
6 VOUT
VSS 4
5 NC
MCP6291
SOT-23-5
VOUT 1
VSS 2
VIN+ 3
5 VDD
-
4 VIN
MCP6291R
SOT-23-5
VOUT 1
VDD 2
VIN+ 3
5 VSS
-
4 VIN
MCP6292
PDIP, SOIC, MSOP
VOUTA 1
8 VDD
VINA_ 2 - +
7 VOUTB
VINA+ 3
VSS 4
+ - 6 VINB_
5 VINB+
MCP6293
MCP6293
PDIP, SOIC, MSOP
SOT-23-6
NC 1
8 CS
VIN_ 2
VIN+ 3
VSS 4
-
+
7
6
VDD
VOUT
VOUT
VSS
1
2
5 NC VIN+ 3
6 VDD
- 5 CS
4 VIN
MCP6294
PDIP, SOIC, TSSOP
VOUTA 1
14 VOUTD
VINA_ 2 - + + - 13 VIND_
VINA+ 3
12 VIND+
VDD 4
11 VSS
VINB+ 5
VINB_ 6
VOUTB 7
10 VINC+
- + + - 9 VINC_
8 VOUTC
MCP6295
PDIP, SOIC, MSOP
VOUTA/VINB+ 1
VINA_ 2
VINA+ 3
-+
+-
8 VDD
7 VOUTB
6 VINB_
VSS 4
5 CS
2004 Microchip Technology Inc.
DS21812D-page 1

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MCP6291/2/3/4/5
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD – VSS ........................................................................7.0V
All Inputs and Outputs ................... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short Circuit Current ................................. Continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.....................................-65°C to +150°C
Junction Temperature (TJ) . .........................................+150°C
ESD Protection On All Pins (HBM/MM) ................ ≥ 4 kV/400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM = VDD/2,
RL = 10 kto VDD/2 and VOUT VDD/2.
Parameters
Sym
Min Typ Max Units
Conditions
Input Offset
Input Offset Voltage
Input Offset Voltage
(Extended Temperature)
Input Offset Temperature Drift
VOS
VOS
VOS/TA
Power Supply Rejection Ratio
PSRR
Input Bias, Input Offset Current and Impedance
-3.0
-5.0
70
±1.7
90
+3.0
+5.0
mV
mV
µV/°C
dB
VCM = VSS (Note 1)
TA = -40°C to +125°C,
VCM = VSS (Note 1)
TA = -40°C to +125°C,
VCM = VSS (Note 1)
VCM = VSS (Note 1)
Input Bias Current
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
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Common Mode (Note 4)
IB
IB
IB
IOS
ZCM
ZDIFF
— ±1.0 —
pA Note 2
— 50 200 pA TA = +85°C (Note 2)
—2
5 nA TA = +125°C (Note 2)
— ±1.0 —
pA Note 3
— 1013||6 —
||pF Note 3
— 1013||3 —
||pF Note 3
Common Mode Input Range
Common Mode Rejection Ratio
Common Mode Rejection Ratio
Open-Loop Gain
VCMR VSS 0.3 — VDD + 0.3 V
CMRR
70
85
dB VCM = -0.3V to 2.5V, VDD = 5V
CMRR
65
80
dB VCM = -0.3V to 5.3V, VDD = 5V
DC Open-Loop Gain (Large Signal)
Output
AOL
90 110 —
dB VOUT = 0.2V to VDD – 0.2V,
VCM = VSS (Note 1)
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
VOL, VOH VSS + 15
ISC
— VDD – 15
±25 —
mV
mA
Supply Voltage
VDD 2.4 — 5.5 V TA = -40°C to +125°C
Quiescent Current per Amplifier
IQ 0.7 1.0 1.3 mA IO = 0
Note
1:
2:
3:
4:
The MCP6295’s VCM for op amp B (pins VOUTA/VINB+ and VINB–) is VSS + 100 mV.
The current at the MCP6295’s VINB– pin is specified by IB only.
This specification does not apply to the MCP6295’s VOUTA/VINB+ pin.
The MCP6295’s VINB– pin (op amp B) has a common mode range (VCMR) of VSS + 100 mV to VDD – 100 mV.
The MCP6295’s VOUTA/VINB+ pin (op amp B) has a voltage range specified by VOH and VOL.
DS21812D-page 2
2004 Microchip Technology Inc.

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MCP6291/2/3/4/5
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, RL = 10 kto VDD/2 and CL = 60 pF.
Parameters
Sym
Min Typ Max
Units
Conditions
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP
PM
SR
10.0
65
7
MHz
°
V/µs
Eni — 3.5 — µVP-P f = 0.1 Hz to 10 Hz
eni — 8.7 — nV/Hz f = 10 kHz
ini — 3 — fA/Hz f = 1 kHz
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V and VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C Note
TA -65 — +150 °C
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
θJA — 256 — °C/W
θJA — 230 — °C/W
θJA — 85 — °C/W
θJA — 163 — °C/W
θJA — 206 — °C/W
θJA 70 °C/W
Thermal Resistance, 14L-SOIC
θJA — 120 — °C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 — °C/W
Note: The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.
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2004 Microchip Technology Inc.
DS21812D-page 3

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MCP6291/2/3/4/5
MCP6293/MCP6295 CHIP SELECT (CS) SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND,
VCM = VDD/2, VOUT VDD/2, RL = 10 kto VDD/2 and CL = 60 pF.
Parameters
Sym
Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL VSS — 0.2 VDD V
CS Input Current, Low
ICSL — 0.01 — µA CS = VSS
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD
VDD
V
CS Input Current, High
ICSH — 0.7 2 µA CS = VDD
GND Current per Amplifier
ISS
— -0.7 —
µA CS = VDD
Amplifier Output Leakage
Dynamic Specifications (Note 1)
— 0.01 —
µA CS = VDD
CS Low to Valid Amplifier Output,
tON
4
10
Turn-on Time
CS High to Amplifier Output High-Z
tOFF
— 0.01 —
Hysteresis
VHYST
0.6
µs CS Low 0.2 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.9 VDD/2,
VDD = 5.0V
µs CS High 0.8 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.1 VDD/2
V VDD = 5V
Note 1: The input condition (VIN) specified applies to both op amp A and B of the MCP6295. The dynamic specification is tested
at the output of op amp B (VOUTB).
CS VIL
tON
VIH
tOFF
VOUT Hi-Z
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-0.7 µA (typ.)
ISS
0.7 µA (typ.)
ICS
-1.0 mA (typ.)
10 nA (typ.)
Hi-Z
-0.7 µA (typ.)
0.7 µA (typ.)
FIGURE 1-1:
Timing Diagram for the
Chip Select (CS) pin on the MCP6293 and
MCP6295.
DS21812D-page 4
2004 Microchip Technology Inc.

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MCP6291/2/3/4/5
2.0 TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 10 kto VDD/2 and CL = 60 pF.
12%
11%
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
840 Samples
VCM = VSS
Input Offset Voltage (mV)
FIGURE 2-1:
Input Offset Voltage.
25%
20%
840 Samples
VCM = VSS
TA = -40°C to +125°C
15%
10%
5%
0%
Input Offset Voltage Drift (µV/°C)
FIGURE 2-4:
Input Offset Voltage Drift.
40%
210 Samples
35% TA = 85°C
30%
25%
20%
15%
10%
5%
0%
0 10
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FIGURE 2-2:
TA = +85 °C.
20 30 40 50 60 70 80 90 100
Input Bias Current (pA)
Input Bias Current at
400
VDD = 2.4V
350
300
250
200
TA = -40°C
150 TA = +25°C
100
TA = +85°C
TA = +125°C
50
0
-0.5
0.0 0.5 1.0 1.5 2.0 2.5
Common Mode Input Voltage (V)
3.0
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 2.4V.
30%
210 Samples
25% TA = +125°C
20%
15%
10%
5%
0%
FIGURE 2-5:
TA = +125 °C.
Input Bias Current (pA)
Input Bias Current at
800
750 VDD = 5.5V
700
650 TA = +125°C
600 TA = +85°C
550 TA = +25°C
500 TA = -40°C
450
400
350
300
250
200
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 5.5V.
2004 Microchip Technology Inc.
DS21812D-page 5