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MCP6561/1R/1U/2/4
1.8V Low Power Push-Pull Output Comparator
Features
• Propagation Delay at 1.8VDD:
- 56 ns (typical) High to Low
- 49 ns (typical) Low to High
• Low Quiescent Current: 100 µA (typical)
• Input Offset Voltage: ±3 mV (typical)
• Rail-to-Rail Input: VSS - 0.3V to VDD + 0.3V
• CMOS/TTL Compatible Output
• Wide Supply Voltage Range: 1.8V to 5.5V
• Available in Single, Dual, and Quad
• Packages: SC70-5, SOT-23-5, SOIC, MSOP,
TSSOP
Typical Applications
• Laptop computers
• Mobile Phones
• Hand-held Electronics
• RC Timers
• Alarm and Monitoring Circuits
• Window Comparators
• Multi-vibrators
Design Aids
• Microchip Advanced Part Selector (MAPS)
www.DataSheet4U.com
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Devices
• Open-Drain Output: MCP6566/6R/6U/7/9
Typical Application
VIN VDD
VDD MCP656X
VOUT
R2
R3 RF
Description
The Microchip Technology, Inc. MCP6561/1R/1U/2/4
families of CMOS/TTL compatible comparators are
offered in single, dual, and quad configurations.
These comparators are optimized for low power 1.8V,
single-supply applications with greater than rail-to-rail
input operation. The internal input hysteresis eliminates
output switching due to internal input noise voltage,
reducing current draw. The push-pull output of the
MCP6561/1R/1U/2/4 family supports rail-to-rail output
swing, and interfaces with CMOS/TTL logic. The output
toggle frequency can reach a typical of 4 MHz (typical)
while limiting supply current surges and dynamic power
consumption during switching.
This family operates with single supply voltage of 1.8V
to 5.5V while drawing less than 100 µA/comparator of
quiescent current (typical).
Package Types
MCP6561
SOT-23-5, SC70-5
MCP6562
SOIC, MSOP
OUT 1
VSS 2
+IN 3
5 VDD OUTA 1
-INA 2
4 -IN +INA 3
VSS 4
-+
+-
8 VDD
7 OUTB
6 -INB
5 +INB
MCP6561R
MCP6564
SOT-23-5
SOIC, TSSOP
OUT 1
VDD 2
5 VSS OUTA 1
-INA 2
+IN 3
4 -IN +INA 3
VDD 4
MCP6561U
SOT-23-5
+INB 5
-INB 6
OUTB 7
VIN+ 1
VSS 2
5 VDD
VIN– 3
4 OUT
14 OUTD
- + + - 13 -IND
12 +IND
11 VSS
10 +INC
- + + - 9 -INC
8 OUTC
© 2009 Microchip Technology Inc.
DS22139B-page 1

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MCP6561/1R/1U/2/4
NOTES:
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DS22139B-page 2
© 2009 Microchip Technology Inc.

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MCP6561/1R/1U/2/4
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
VDD - VSS ....................................................................... 6.5V
All other inputs and outputs............VSS - 0.3V to VDD + 0.3V
Difference Input voltage ......................................|VDD - VSS|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)..................≥ 4 kV/300V
*Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
RL = 10 kΩ to VDD/2 (see Figure 1-1).
Parameters
Symbol Min Typ Max Units
Conditions
Power Supply
Supply Voltage
Quiescent Current per comparator
Power Supply Rejection Ratio
Input
Input Offset Voltage
Input Offset Drift
Input Offset Current
Input Bias Current
VDD
IQ
PSRR
VOS
ΔVOS/ΔT
IOS
IB
Input Hysteresis Voltage
www.DataSheeItn4pUu.ct oHmysteresis Linear Temp. Co.
Input Hysteresis Quadratic Temp.
Co.
VHYST
TC1
TC2
1.8
60
63
-10
1.0
100
70
±3
±2
±1
1
60
1500
10
0.3
5.5 V
130 µA IOUT = 0
— dB VCM = VSS
+10
5000
5.0
mV
µV/°C
pA
pA
pA
pA
mV
µV/°C
µV/°C2
VCM = VSS (Note 1)
VCM = VSS
VCM = VSS
TA = +25°C, VIN- = VDD/2
TA = +85°C, VIN- = VDD/2
TA = +125°C, VIN- = VDD/2
VCM = VSS (Notes 1, 2)
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
Common Mode Input Impedance
Differential Input Impedance
Push-Pull Output
VCMR
CMRR
ZCM
ZDIFF
VSS0.2
VSS0.3
54
50
54
66
63
65
1013||4
1013||2
VDD+0.2
VDD+0.3
V
V
dB
dB
dB
Ω||pF
Ω||pF
VDD = 1.8V
VDD = 5.5V
VCM= -0.3V to VDD+0.3V, VDD = 5.5V
VCM= VDD/2 to VDD+0.3V, VDD = 5.5V
VCM= -0.3V to VDD/2, VDD = 5.5V
High Level Output Voltage
VOH VDD0.7 — — V IOUT = -3 mA/-8 mA with VDD = 1.8V/5.5V
(Note 3)
Low Level Output Voltage
VOL — — 0.6 V IOUT = 3 mA/8 mA with VDD = 1.8V/5.5V
(Note 3)
Short Circuit Current
ISC — ±30 — mA Note 3
Output Pin Capacitance
COUT
8
— pF
Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2: VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
3: Limit the output current to Absolute Maximum Rating of 50 mA.
© 2009 Microchip Technology Inc.
DS22139B-page 3

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MCP6561/1R/1U/2/4
AC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
RL = 10 kΩ to VDD/2, and CL = 25 pF. (see Figure 1-1).
Parameters
Symbol Min Typ Max Units
Conditions
Propagation Delay
High-to-Low,100 mV Overdrive
Low-to-High, 100 mV Overdrive
Skew 1
Output
tPHL
tPLH
tPDS
— 56 80
— 34 80
— 49 80
— 47 80
— ±10 —
ns VCM= VDD/2, VDD = 1.8V
ns VCM= VDD/2, VDD = 5.5V
ns VCM= VDD/2, VDD = 1.8V
ns VCM= VDD/2, VDD = 5.5V
ns
Rise Time
tR
— 20 —
ns
Fall Time
tF
— 20 —
ns
Maximum Toggle Frequency
fTG — 4 — MHz VDD = 5.5V
Input Voltage Noise 2
— 2 — MHz VDD = 1.8V
ENI — 350 — µVP-P 10 Hz to 10 MHz
Note 1: Propagation Delay Skew is defined as: tPDS = tPLH - tPHL.
2: ENI is based on SPICE simulation.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Symbol Min Typ Max Units
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C
TA -40 — +125 °C
TA -65 — +150 °C
Thermal Resistance, SC70-5
Thermal Resistance, SOT-23-5
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
w w w . DTahtearmSahl Reeesits4taUnc.ec, 1o4mL-SOIC
Thermal Resistance, 14L-TSSOP
θJA — 331 — °C/W
θJA
— 220.7 —
°C/W
θJA
— 149.5 —
°C/W
θJA — 211 — °C/W
θJA
— 95.3 —
°C/W
θJA — 100 — °C/W
Conditions
1.2 Test Circuit Configuration
This test circuit configuration is used to determine the
AC and DC specifications.
VDD MCP656X
200 kΩ
200 kΩ
VIN = VSS
IOUT
200 kΩ
VSS = 0V
200 kΩ
VOUT
25 pF
FIGURE 1-1:
AC and DC Test Circuit for
the Push-Pull Output Comparators.
DS22139B-page 4
© 2009 Microchip Technology Inc.

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MCP6561/1R/1U/2/4
2.0 TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN= GND,
RL = 10 kΩ to VDD/2, and CL = 25 pF.
50%
40%
30%
VDD = 1.8V
VCM = VSS
Avg. = -0.1 mV
StDev = 2.1 mV
3588 units
VDD = 5.5V
VCM = VSS
Avg. = -0.9 mV
StDev = 2.1 mV
3588 units
20%
10%
0%
-10 -8 -6 -4 -2 0 2 4 6 8 10
VOS (mV)
FIGURE 2-1:
Input Offset Voltage.
30%
25%
20%
VDD = 1.8V
Avg. = 3.4 mV
StDev = 0.2 mV
3588 units
VDD = 5.5V
Avg. = 3.6 mV
StDev = 0.1 mV
3588 units
15%
10%
5%
0%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VHYST (mV)
FIGURE 2-4:
Input Hysteresis Voltage.
60%
50%
40%
30%
VCM = VSS
Avg. = 0.9 µV/°C
StDev = 6.6 µV/°C
1380 Units
TA = -40°C to +125°C
20%
10%
0%
-60 -48 -36 -24 -12 0 12 24 36 48 60
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VOS Drift (µV/°C)
FIGURE 2-2:
Input Offset Voltage Drift.
7.0
VDD = 5.5V
6.0
5.0
4.0 VIN-
3.0
2.0
1.0
0.0
-1.0
VIN+ = VDD/2
VOUT
Time (3 µs/div)
FIGURE 2-3:
Input vs. Output Signal, No
Phase Reversal.
60%
50%
40%
VDD = 5.5V
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
VDD = 1.8V
Avg. = 12 µV/°C
StDev = 0.6 µV/°C
30%
20%
10%
0%
1380 Units
TA = -40°C to 125°C
VCM = VSS
0 2 4 6 8 10 12 14 16 18 20
VHYST Drift, TC1 (µV/°C)
FIGURE 2-5:
Input Hysteresis Voltage
Drift - Linear Temp. Co. (TC1).
30%
20%
VDD = 5.5V
Avg. = 0.25 µV/°C2
StDev = 0.1 µV/°C2
VDD = 1.8V
Avg. = 0.3 µV/°C2
StDev = 0.2 µV/°C2
10%
1380 Units
TA = -40°C to +125°C
VCM = VSS
0%
-0.50
-0.25 0.00 0.25 0.50 0.75
VHYST Drift, TC2 (µV/°C2)
1.00
FIGURE 2-6:
Input Hysteresis Voltage
Drift - Quadratic Temp. Co. (TC2).
© 2009 Microchip Technology Inc.
DS22139B-page 5