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®
Rev. 2.2
LY622568
256K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 2.0
Rev. 2.1
Rev. 2.2
Description
Initial Issue
Revised ISB1/IDR/Test Condition of ICC
Adding PKG type : 32 P-DIP
Revised Test Condition of ISB1/IDR
Adding SL Spec.
Revised ABSOLUTE MAXIMUN RATINGS
Added ISB1/IDR values when TA = 25and TA = 40
Revised ISB1 (MAX) of SL grade
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised -35ns to -45ns Spec.
Revised VDR
Issue Date
Aug.29.2005
Oct.31.2005
May.14.2007
Jul.26.2007
Mar.30.2009
Sep.11.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.2
LY622568
256K X 8 BIT LOW POWER CMOS SRAM
FEATURES
„ Fast access time : 45/55/70ns
„ Low power consumption:
Operating current : 50/40/30mA (TYP.)
Standby current : 3μA@5V(TYP.) LL/SL version
2μA@3V(TYP.) SL version
„ Single 4.5V ~ 5.5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
32-pin 450 mil SOP
32-pin 600 mil P-DIP
GENERAL DESCRIPTION
The LY622568 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY622568 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY622568 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY622568(LL)
LY622568(LLE)
LY622568(LLI)
LY622568(SL)
LY622568(SLE)
LY622568(SLI)
Operating
Temperature
0 ~ 70
-20 ~ 80
-40 ~ 85
0 ~ 70
-20 ~ 80
-40 ~ 85
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
- 3µA@5V 50/40/30mA
- 3µA@5V 50/40/30mA
- 3µA@5V 50/40/30mA
2µA@3V 3µA@5V
50/40/30mA
2µA@3V 3µA@5V
50/40/30mA
2µA@3V 3µA@5V
50/40/30mA
www.DaFtaUShNeeCt4TU.IcOomNAL BLOCK DIAGRAM
Vcc
Vss
A0-A17
DECODER
256Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL
A0 - A17
DQ0 – DQ7
CE#, CE2
WE#
OE#
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.2
LY622568
256K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 Vcc
31 A15
30 CE2
29 WE#
28 A13 A11
27
A8
A9
A8
26 A9 A13
WE#
25 A11 CE2
A15
24
OE#
Vcc
A17
23 A10 A16
A14
22
CE#
A12
21
DQ7
A7
A6
20
DQ6
A5
A4
19 DQ5
18 DQ4
17 DQ3
SOP/P-DIP
ABSOLUTE MAXIMUN RATINGS*
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LY622568
TSOP-I/STSOP
32 OE#
31 A10
30 CE#
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 Vss
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 6.5
V
Voltage on any other pin relative to VSS
VT2 -0.5 to VCC+0.5
V
0 to 70(C grade)
Operating Temperature
www.DataSheet4U.com
TA -20 to 80(E grade)
-40 to 85(I grade)
Storage Temperature
TSTG
-65 to 150
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
Standby
H
X
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB1
ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.2
LY622568
256K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
SYMBOL
VCC
VIH*1
VIL*2
TEST CONDITION
Input Leakage Current
ILI VCC VIN VSS
Output Leakage
Current
ILO
VCC VOUT VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Average Operating
Cycle time = Min.
ICC
CE# = VIL and CE2 = VIH ,
II/O = 0mA
Other pins at VIL or VIH
- 45
- 55
- 70
Power supply Current
Cycle time = 1µs
ICC1
CE# = 0.2V and CE2VCC-0.2V,
II/O = 0mA
Other pins at 0.2V or VCC - 0.2V
LL/LLE/LLI
Standby Power
Supply Current
CE# VCC-0.2V
ISB1
or CE20.2V
Others at 0.2V or
SL*5
SLE*5
25
SLI*5 40
VCC - 0.2V
SL
SLE/SLI
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
www.DataTSyhpeiceat4l Uva.cluoems are measured at VCC = VCC(TYP.) and TA = 25
5. This parameter is measured at VCC = 3.0V
MIN.
4.5
2.4
- 0.2
-1
-1
2.4
-
-
-
-
-
-
-
-
-
-
TYP. *4
5.0
-
-
-
MAX.
5.5
VCC+0.3
0.6
1
-1
--
- 0.4
50 80
40 60
30 50
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
4 10 mA
3 50 µA
2 5 µA
2 5 µA
3 20 µA
3 25 µA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.2
LY622568
256K X 8 BIT LOW POWER CMOS SRAM
CAPACITANCE (TA = 25, f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN -
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
MAX
6
8
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -2mA/4mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
LY622568-45
MIN. MAX.
45 -
- 45
- 45
- 25
10 -
5-
- 15
- 15
10 -
LY622568-55
MIN. MAX.
55 -
- 55
- 55
- 30
10 -
5-
- 20
- 20
10 -
LY622568-70
MIN. MAX.
70 -
- 70
- 70
- 35
10 -
5-
- 25
- 25
10 -
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
www.DataSheet4U.comPARAMETER
SYM. LY622568-45 LY622568-55
MIN. MAX. MIN. MAX.
Write Cycle Time
tWC 45 - 55 -
Address Valid to End of Write tAW 40 - 50 -
Chip Enable to End of Write
tCW 40 - 50 -
Address Set-up Time
tAS 0 - 0 -
Write Pulse Width
tWP 35 - 45 -
Write Recovery Time
tWR 0 - 0 -
Data to Write Time Overlap
tDW 20 - 25 -
Data Hold from End of Write Time tDH
0-0-
Output Active from End of Write
tOW*
5
-
5-
Write to Output in High-Z
tWHZ* - 15 - 20
*These parameters are guaranteed by device characterization, but not production tested.
LY622568-70
MIN. MAX.
70 -
60 -
60 -
0-
55 -
0-
30 -
0-
5-
- 25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4