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®
Rev. 1.7
LY62L5128
512K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 1.6
Rev. 1.7
Description
Initial Issue
Adding PKG type : 32 P-DIP
Revised Test Condition of ISB1/IDR
Deleted L Spec.
Added SL Spec.
Revised VTERM to VT1 and VT2
Revised Test Condition of ICC
Revised ISB/IDR
Adding PKG type : 44 TSOP-II
Added ISB1/IDR values when TA = 25and TA = 40
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added PKG type : 32 TSOP-II
Deleted PKG type : 32 TSOP-II
Issue Date
Jul.25.2004
May.14.2007
Nov.8.2007
Mar.21.2008
Jul.14.2008
Mar.30.2009
Jun.22.2009
Jul.17.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 1.7
LY62L5128
512K X 8 BIT LOW POWER CMOS SRAM
FEATURES
„ Fast access time : 45/55/70ns
„ Low power consumption:
Operating current : 40/30/20mA (TYP.)
Standby current : 2μA (TYP.) LL-version
1μA (TYP.) SL-version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
32-pin 600 mil P-DIP
44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY62L5128
LY62L5128(E)
LY62L5128(I)
Operating
Temperature
0 ~ 70
-20 ~ 80
-40 ~ 85
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
FUNCTIONAL BLOCK DIAGRAM
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Vcc
Vss
A0-A18
DECODER
512Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
GENERAL DESCRIPTION
The LY62L5128 is a 4,194,304-bit low power CMOS
static random access memory organized as 524,288
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY62L5128 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY62L5128 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
Speed
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
2µA(LL)/1µA(SL)
40/30/20mA
2µA(LL)/1µA(SL)
40/30/20mA
2µA(LL)/1µA(SL)
40/30/20mA
PIN DESCRIPTION
SYMBOL
A0 - A18
DQ0 – DQ7
CE#
WE#
OE#
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 1.7
LY62L5128
512K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
SOP/P-DIP
Vcc
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
A17
A15
Vcc
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LY62L5128
TSOP-I/STSOP
32 OE#
31 A10
30 CE#
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 Vss
23 DQ2
22 DQ1
21 DQ0
20 A0
19 A1
18 A2
17 A3
NC
NC
A4
A3
A2
A1
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CE#
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
WE#
A18
A17
A16
A15
A14
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP-II
44 NC
43 NC
42 NC
41 A5
40 A6
39 A7
38 A8
37 OE#
36 DQ7
35 DQ6
34 Vss
33
Vcc
A A0 A1 NC A3 A6 A8
32 DQ5
B DQ4 A2 WE# A4 A7 DQ0
31 DQ4
30 A9
C DQ5
NC A5
DQ1
29
A10
D Vss
Vcc
28
A11
E Vcc
Vss
27 A12
F DQ6
A18 A17
DQ2
26 A13
25 NC G DQ7 OE# CE# A16 A15 DQ3
24 NC H A9 A10 A11 A12 A13 A14
23 NC
123456
TFBGA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 1.7
LY62L5128
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 4.6
V
Voltage on any other pin relative to VSS
VT2 -0.5 to VCC+0.5
V
0 to 70(C grade)
Operating Temperature
TA -20 to 80(E grade)
-40 to 85(I grade)
Storage Temperature
TSTG
-65 to 150
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
CE#
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
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Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 1.7
LY62L5128
512K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
SYMBOL
VCC
VIH*1
VIL*2
TEST CONDITION
Input Leakage Current
ILI VCC VIN VSS
Output Leakage
Current
ILO
VCC VOUT VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Average Operating
Cycle time = Min.
ICC
CE# = VIL and CE2 = VIH,
II/O = 0mA
Other pins at VIL or VIH
- 45
- 55
- 70
Power supply Current
Cycle time = 1µs
ICC1
CE#0.2V and CE2VCC-0.2V,,
II/O = 0mA
Other pins at 0.2V or VCC-0.2V
ISB
CE# = VIH or CE2 = VIL,
other pins at VIL or VIH
LL
Standby Power
Supply Current
CE# VCC-0.2V
ISB1
or CE20.2V
Others at 0.2V or
VCC - 0.2V
LLE/LLI
SL*5
SLE*5
25
SLI*5 40
SL
SLE/SLI
Notes:
www.Da1ta. SVhIHe(meta4xU).c=oVmCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25
5. This parameter is measured at VCC = 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
-
-
-
-
TYP. *4
3.0
-
-
-
MAX.
3.6
VCC+0.3
0.6
1
-1
2.7 -
- 0.4
40 50
30 40
20 30
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
4 5 mA
0.3 1.25 mA
2 15 µA
2 20 µA
1 3 µA
1 3 µA
1 10 µA
1 12 µA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4