LY62L10248.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 LY62L10248 데이타시트 다운로드

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®
Rev. 0.6
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 0.5
Rev. 0.6
Description
Initial Issue
Revised ISB1, ICC1, IDR, VDR
Delete -45ns Spec.
Added ISB Spec.
Added SL Spec.
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added ISB1/IDR values when TA = 25and TA = 40
Revised IDR Spec.
Issue Date
Jan.8.2007
Nov.1.2007
Feb.1.2008
Jul.2.2008
May.20.2009
Oct.29.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 0.6
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
FEATURES
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 30/20mA (TYP.)
Standby current : 5μA (TYP.) LL-version
1.5μA (TYP.) SL-version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 1.2V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L10248
LY62L10248(E)
LY62L10248(I)
Operating
Temperature
0 ~ 70
-20 ~ 80
-40 ~ 85
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
FUNCTIONAL BLOCK DIAGRAM
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A0-A19
DECODER
1024Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
GENERAL DESCRIPTION
The LY62L10248 is a 8,388,608-bit low power
CMOS static random access memory organized as
1,048,576 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L10248 is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The LY62L10248 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
Speed
55/70ns
55/70ns
55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
5µA(LL)/1.5µA(SL)
30/20mA
5µA(LL)/1.5µA(SL)
30/20mA
5µA(LL)/1.5µA(SL)
30/20mA
PIN DESCRIPTION
SYMBOL
A0 - A19
DQ0 – DQ7
CE#, CE2
WE#
OE#
VCC
VSS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 0.6
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
NC
NC
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
NC
NC
WE#
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
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TSOP-II
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
44 A5
43 A6
42 A7
41 OE#
40 CE2
39 A8
38 NC
37 NC
36 DQ7
35 DQ6
34 Vss
33 Vcc
A NC OE# A0 A1 A2 CE2
32 DQ5
B NC NC A3 A4 CE# NC
31 DQ4
30 NC
C DQ0 NC A5 A6 NC DQ4
29 NC
D Vss DQ1 A17 A7 DQ5 Vcc
28 A9
27 A10
26 A11
25 A12
E Vcc DQ2 NC A16 DQ6 Vss
F DQ3 NC A14 A15 NC DQ7
G NC NC A12 A13 WE# NC
24 A13
H A18 A8 A9 A10 A11 A19
23 A14
123456
TFBGA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 0.6
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 4.6
V
Voltage on any other pin relative to VSS
VT2 -0.5 to VCC+0.5
V
Operating Temperature
0 to 70(C grade)
TA -20 to 80(E grade)
Storage Temperature
TSTG
-40 to 85(I grade)
-65 to 150
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
Standby
H
X
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
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Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 0.6
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
VIH*1
VIL*2
Input Leakage Current
Output Leakage
Current
ILI VCC VIN VSS
ILO
VCC VOUT VSS
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Average Operating
Cycle time = Min.
ICC
CE# = VIL and CE2 = VIH
II/O = 0mA
Other pins at VIL or VIH
- 55
- 70
Power supply Current
Cycle time = 1µs
ICC1
CE#0.2V and CE2VCC-0.2V
II/O = 0mA
other pins at 0.2V or VCC-0.2V
ISB
CE# = VIH or CE2 = VIL
Other pins at VIL or VIH
LL
LLE
Standby Power
Supply Current
CE# VCC-0.2V
ISB1
or CE20.2V
Other pins at 0.2V
or VCC-0.2V
LLI
SL*5
SLE*5
SLI*5
SL
25
40
SLE
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SLI
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25
5. This parameter is measured at VCC = 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. *4 MAX.
3.0 3.6
- VCC+0.3
- 0.6
-1
UNIT
V
V
V
µA
- 1 µA
2.7 -
- 0.4
V
V
30 40 mA
20 30 mA
4 8 mA
0.15
5
5
5
1.5
1.5
1.5
1.5
1.5
1
30
40
50
5
5
15
15
20
mA
µA
µA
µA
µA
µA
µA
µA
µA
CAPACITANCE (TA = 25, f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN -
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
MAX
6
8
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4