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®
Rev. 2.1
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 2.0
Rev. 2.1
Description
Initial Issue
Revised VIL = 0.6V => 0.8V
Revised Package Outline Dimension(TSOP-II)
Added LL Spec.
Revised Test Condition of ISB1/IDR
Added -12ns Spec.
Revised ICC and ISB1
Added I grade
Revised ABSOLUTE MAXIMUN RATINGS
Revised Test Condition of ICC
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Issue Date
Mar.23.2006
Jun.9.2006
Apr.12.2007
Jun.25.2007
Apr.17.2009
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Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.1
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 12/15/20/25ns
„ Low power consumption:
Operating current : 180/140/110/100mA(MAX.)
Standby current :
15mA(MAX. for 12ns)
3mA(MAX. for 15/20/25ns)
100µA( (MAX. for 15/20/25ns LL version)
„ Single 5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 2.0V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
The LY6125616 is a 4,194,304-bit low power CMOS
static random access memory organized as 262,144
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6125616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6125616 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
Product
Family
LY6125616
LY6125616(E)
LY6125616(I)
LY6125616
LY6125616(E)
LY6125616(I)
LY6125616(LL)
www.DataSheLeYt46U1.c2o5m616(LLE)
LY6125616(LLI)
Operating
Temperature
0 ~ 70
-20 ~ 80
-40 ~ 85
0 ~ 70
-20 ~ 80
-40 ~ 85
0 ~ 70
-20 ~ 80
-40 ~ 85
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
12ns
12ns
12ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(ISB1)
Operating(Icc)
15mA(MAX.)
180mA(MAX.)
15mA(MAX.)
180mA(MAX.)
15mA(MAX.)
180mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.1
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A17
DECODER
256Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A17
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
CE# Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB# Lower Byte Control
UB# Upper Byte Control
VCC Power Supply
VSS Ground
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.1
PIN CONFIGURATION
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
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ABSOLUTE MAXIMUN RATINGS*
44 A5
43 A6
42 A7
41 OE#
40 UB#
39 LB#
38 DQ15
37 DQ14
36 DQ13
35 DQ12
34 Vss
33 Vcc
32 DQ11
31 DQ10
30 DQ9
29 DQ8
28 NC
27 A8
26 A9
25 A10
24 A11
23 A12
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VCC relative to VSS
VT1 -0.5 to 6.5
V
Voltage on any other pin relative to VSS
VT2 -0.5 to VCC+0.5
V
Operating Temperature
0 to 70(C grade)
TA -20 to 80(E grade)
Storage Temperature
TSTG
-40 to 85(I grade)
-65 to 150
Power Dissipation
PD 1 W
DC Output Current
IOUT 50 mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
Rev. 2.1
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
CE# OE# WE# LB#
Standby
HX
Output Disable
LH
LX
LL
Read
LL
LL
LX
Write
LX
LX
Note: H = VIH, L = VIL, X = Don't care.
XX
HX
XH
HL
HH
HL
LL
LH
LL
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7 DQ8-DQ15
High – Z High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
High – Z
High – Z
High – Z
DOUT
DOUT
High – Z
DIN
DIN
SUPPLY CURRENT
ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
VIH*1
VIL*2
Input Leakage Current
ILI VCC VIN VSS
Output Leakage
Current
ILO
VCC VOUT VSS,
Output Disabled
Output High Voltage
VOH IOH = -4mA
Output Low Voltage
VOL IOL = 8mA
Average Operating
Power supply Current
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Standby Power
Supply Current
12
ICC
Cycle time = Min.
CE# = VIL , II/O = 0mA
Others at VIL or VIH
15
20
25
ISB1 OCEth#ers VatC0C.-20V.2/ VVCC-0.2V111552//2200//2255LL
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
6. 50µA for special request
MIN.
4.5
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
-
TYP. *4 MAX.
5.0 5.5
- VCC+0.3
- 0.8
-1
UNIT
V
V
V
µA
- 1 µA
- -V
- 0.4 V
- 180 mA
100 140 mA
80 110 mA
75 100 mA
- 15 mA
0.1 3*5 mA
20 100*6 µA
CAPACITANCE (TA = 25, f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
Input Capacitance
CIN -
Input/Output Capacitance
CI/O
-
Note : These parameters are guaranteed by device characterization, but not production tested.
MAX
8
10
UNIT
pF
pF
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4