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Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base voltage VCBO
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1263
base voltage 2SD1263A
VCBO
350
400
Collector to 2SD1263
emitter voltage 2SD1263A
VCEO
250
300
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
1.5
0.75
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1263
www.DcautrareSnht eet4U.com 2SD1263A
Collector cutoff
2SD1263
current
2SD1263A
ICES
ICEO
Emitter cutoff current
Collector to emitter 2SD1263
voltage
2SD1263A
IEBO
VCEO
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
1
mA
1
1
mA
1
1 mA
250
V
300
70 250
10
1.5 V
1V
30 MHz
0.5 µs
2 µs
0.5 µs
1

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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0
0.8
IB=14mA
12mA
10mA
0.6 8mA
6mA
0.4 4mA
0.2 2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1263, 2SD1263A
IC — VBE
4.0
VCE=10V
3.2 25˚C
TC=100˚C –25˚C
2.4
1.6
0.8
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
10
TC=100˚C
3
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
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Area of safe operation (ASO)
10
3
ICP
1
IC
0.3
0.1
Non repetitive pulse
TC=25˚C
10ms
t=1ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
10000
3000
1000
hFE — IC
VCE=10V
300
TC=100˚C
100 25˚C
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2