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Q2N2222
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Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RqJA
RqJC
Value
40
75
6.0
600
625
5.0
1.5
12
–55 to +150
Max
200
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
1
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
www.DataSChoeleletc4tUor.coEmmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
40
75
6.0
— Vdc
— Vdc
— Vdc
10 nAdc
µAdc
0.01
10
10 nAdc
10 nAdc
20 nAdc
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Q2N2222

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Q2N2222
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Current–Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
hre
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
www.DataShe(IeCt4=U1.0commAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
hoe
rbCc
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
tr
ts
tf
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Min
35
50
75
35
100
50
40
0.6
300
2.0
0.25
50
75
5.0
25
Max Unit
300
Vdc
0.3
1.0
Vdc
1.2
2.0
— MHz
8.0 pF
25 pF
8.0
1.25
8.0
4.0
300
375
35
200
150
k
X 10–4
mmhos
ps
4.0 dB
10 ns
25 ns
225 ns
60 ns
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+16 V
0
-ā2 V
Q2N2222
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 µs,
DUTY CYCLE 2.0%
< 2 ns
1 k
Figure 1. Turn–On Time
+ā30 V
200
+16 V
1.0 to 100 µs,
DUTY CYCLE 2.0%
CS* < 10 pF
0
-14 V
< 20 ns
1k
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
-ā4 V
Figure 2. Turn–Off Time
+ā30 V
200
CS* < 10 pF
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
1.0
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0.8
0.6 IC = 1.0 mA
10 mA
150 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IB, BASE CURRENT (mA)
2.0 3.0 5.0
Figure 4. Collector Saturation Region
TJ = 25°C
500 mA
10 20 30 50
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Q2N2222
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
500
300
200 ts = ts - 1/8 tf
100
70
50 tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
10 10
RS = OPTIMUM
f = 1.0 kHz
8.0
IC = 1.0 mA, RS = 150
500 µA, RS = 200
RS = SOURCE
RS = RESISTANCE
8.0
IC = 50 µA
100 µA, RS = 2.0 k
100 µA
6.0 50 µA, RS = 4.0 k
6.0 500 µA
1.0 mA
4.0 4.0
2.0 2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
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20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Current–Gain Bandwidth Product
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Q2N2222
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 11. “On” Voltages
+0.5
0 RqVC for VCE(sat)
-ā0.5
-ā1.0
-ā1.5
-ā2.0 RqVB for VBE
-ā2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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