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Data Sheet
HGTG12N60C3D
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49123. The diode used in anti parallel
with the IGBT is the development type TA49061.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49117.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60C3D TO-247
G12N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
www.DataSheet4U.com
E
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time . . . . . . . . . . . . . . . . 210ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B

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HGTG12N60C3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG12N60C3D
600
24
12
15
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
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Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
IC = 250µA, VGE = 0V
600 -
-V
BVECS
ICES
VCE(SAT)
VGE(TH)
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 15A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
15 25
-
V
- - 250 µA
- - 2.0 mA
- 1.65 2.0 V
- 1.85 2.2 V
- 1.80 2.2 V
-
2.0 2.4
V
3.0 5.0 6.0
V
IGES
SSOA
VGE = ±20V
TJ = 150oC,
VGE = 15V,
RG = 25Ω,
L = 100µH
VCE(PK) = 480V
VCE(PK) = 600V
-
80
24
-
±100
nA
- -A
- -A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
IEC = 12A
- 7.6 -
V
- 48 55 nC
- 62 71 nC
- 14 - ns
- 16 - ns
-
270 400
ns
-
210 275
ns
- 380 -
µJ
- 900 -
µJ
-
1.7 2.0
V
©2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B

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HGTG12N60C3D
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
IEC = 12A, dIEC/dt = 100A/µs
IEC = 1.0A, dIEC/dt = 100A/µs
IGBT
Diode
- 34 42 ns
- 30 37 ns
- - 1.2 oC/W
- - 1.5 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
80
DUTY CYCLE <0.5%, VCE = 10V
70 PULSE DURATION = 250µs
60
50 TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4
6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
VGE= 15.0V
70 12.0V
60
50 10.0V
40
30
20
10
0
0
9.0V
8.5V
8.0V
7.0V
2 4 68
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7.5V
10
FIGURE 2. SATURATION CHARACTERISTICS
80
PULSE DURATION = 250µs
www.DataSh7e0et4UD.UcToYmCYCLE <0.5%, VGE = 10V
60
50
40
30
20
10
0
0
TC = -40oC
TC = 150oC
TC = 25oC
1234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80 PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 15V
60 TC = -40oC
50
TC = 25oC
40
TC = 150oC
30
20
10
0
01 2 34
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B