A1265N.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 A1265N 데이타시트 다운로드

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Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC3182
·2SA1265 with short pin
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA1265N
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
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VEBO
Emitter-base voltage
Open base
Open collector
IC Collector current
IBB Base current
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-140
-140
-5
-10
-1
100
150
-55~150
UNIT
V
V
V
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A
VBE Base-emitter voltage
IC=-5A ; VCE=-5V
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
VCB=-140V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=5V
fT Transition frequency
IC=-1A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=10V ;f=1MHz
‹ hFE-1 Classifications
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O
55-110
80-160
Product Specification
2SA1265N
MIN TYP. MAX UNIT
-140
V
-0.8 -2.0 V
-1.0 -1.5 V
-5 μA
-5 μA
55 160
35
30 MHz
480 pF
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA1265N
www.DataSheet4U.com
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3