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150U/150UR
SILICON POWER DIODE
NAINA
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
IF
Maximum Average Forward
Current Te=1250C
150A
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
1.4V
IFSM
Maximum peak one cycle
(non-rep) surge current 10 m sec
3000A
IFRM
Maximum peak repetitive
surge current
750A
I2t Maximum I2t rating (non-rep.) for 45,000 A2 Sec
5 to 10 msec.
THERMAL MECHANICAL SPECIFICATIONS
www.DataSheet4U.com
θ JC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
0.250C/W
-650C to 1500C
-650C to 2000C
2.0 M-kg min,
3.0 M-kg max
150 gms.
TYPE
VRRM
150U/150UR
Max. repetitive peak reverse
voltage (v)
10
100
VR(RMS) Max. R.M.S. reverse voltage (V) 70
20 40 60
200 400 600
140 280 420
80 100
800 1000
120 140 160
1200 1400 1600
560 700 840 980 1120
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600
Recommended R.M.S. working 40 80 160 240 320 400
Voltage(v)
480 560 640
Max. Average reverse leakage 200 200 200 200
current @ VRRM Tc 250C (uA)
200 200
200 200 200
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site: www.nainasemi.com