J599.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 J599 데이타시트 다운로드

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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 75 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mMAX. (VGS = –4.0 V, ID = –10 A)
Low Ciss: Ciss = 1300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
+20
+50
Total Power Dissipation (TC = 25°C) PT 35
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
www.DataSSthoereatg4Ue .Tcoemmperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg –55 to +150
IAS –20
EAS 40
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000

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2SJ599
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS VDS = 60 V, VGS = 0 V
IGSS VGS = +20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 10 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 10 A
RDS(on)2 VGS = 4.0 V, ID = 10 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 10 A,
Rise Time
tr VGS(on) = 10 V,
Turn-off Delay Time
td(off)
VDD = 30 V,
Fall Time
tf RG = 0
Total Gate Charge
QG ID = 20A,
Gate to Source Charge
QGS VDD= 48 V,
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr IF = 20 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A / µs
MIN. TYP. MAX.
10
+10
1.5 2.0 2.5
8 16
60 75
78 111
1300
240
100
8
9
52
16
26
5
7
1.0
51
102
UNIT
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
www.DataSheet4U.com
RG = 25
PG
VGS = –20 V 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
10%
0
VDS ()
90%
VDS
VDS 0
Wave Form
td(on)
VGS(on) 90%
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Preliminary Data Sheet D14644EJ1V0DS

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PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2SJ599
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection Source
Diode
www.DataSheet4U.com
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Preliminary Data Sheet D14644EJ1V0DS
3

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2SJ599
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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M8E 00. 4