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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.7 35.1
19.8 35.3
19.4 35.7
6.1 - 37.4
6.2 - 37.5
6.1 - 37.4
Document Number: MRF8S9220H
Rev. 0, 11/2009
MRF8S9220HR3
MRF8S9220HSR3
920 - 960 MHz, 65 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465 - 06, STYLE 1
NI - 780
MRF8S9220HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF8S9220HSR3
Table 1. Maximum Ratings
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Drain- Source Voltage
Rating
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Value
- 0.5, +70
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81‘°C, 65 W CW, 28 Vdc, IDQ = 1600 mA
Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ = 1600 mA
RθJC
0.39
0.32
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
1

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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., f = 960 MHz,
Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 18.0 19.4 21.0 dB
Drain Efficiency
ηD 34.0 35.7 —
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 5.7 6.1 — dB
Adjacent Channel Power Ratio
ACPR
- 37.4
- 35
dBc
Input Return Loss
IRL — - 13 - 8 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.,
Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
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Frequency
Gps
(dB)
hD
Output PAR
ACPR
(%) (dB) (dB)
IRL
(dB)
920 MHz
19.7 35.1 6.1 - 37.4 - 13
940 MHz
19.8 35.3 6.2 - 37.5 - 24
960 MHz
19.4 35.7 6.1 - 37.4 - 13
1. Part internally matched both on input and output.
(continued)
MRF8S9220HR3 MRF8S9220HSR3
2
RF Device Data
Freescale Semiconductor

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Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 920 - 960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
220
IMD Symmetry @ 200 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
IMDsym
— 12 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
40
Gain Flatness in 40 MHz Bandwidth @ Pout = 65 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
GF — 0.3 —
ΔG — 0.017 —
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB — 0.016 —
Unit
W
MHz
MHz
dB
dB/°C
dBm/°C
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RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
3

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R3
C10
C1
C2 C3 C4
MRF8S9XXXH
Rev. 1
C30
R2
C9
C26 C28
C8
C22*
C24*
C7 R1
C20
C16
C18
C14
C17
C5 C19 C15
C6
C21* C25 C27
C23*
C11
C13 C12
*C21, C22, C23, and C24 are mounted vertically.
Figure 1. MRF8S9220HR3(HSR3) Test Circuit Component Layout
C29
Table 5. MRF8S9220HR3(HSR3) Test Circuit Component Designations and Values
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Description
Part Number
C1, C8, C11, C23, C24
39 pF Chip Capacitors
ATC100B390JT500XT
C2
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
C3, C12
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
C4, C14
1.2 pF Chip Capacitors
ATC100B1R2BT500XT
C5
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
C6, C7, C21, C22
10 pF Chip Capacitors
ATC100B100JT500XT
C9
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC- TU
C10
47 μF, 50 V Electrolytic Capacitor
476KXM050M
C13
1.3 pF Chip Capacitor
ATC100B1R3BT500XT
C15, C16
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
C17
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
C18
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
C19, C20
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
C25, C26, C27, C28
C29, C30
R1
R2
R3
10 μF, 50 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
0 Ω, 3 A Chip Resistor
3.3 Ω, 1/2 W Chip Resistor
2.2 kΩ, 1/4 W Chip Resistor
GRM55DR61H106KA88L
MCGPR63V477M13X26- RH
CRCW12060000Z0EA
P3.3VCT- ND
CRCW12062K20FKEA
PCB
0.030, εr = 3.5
RF - 35
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
Kemet
Illinois Capacitor
ATC
ATC
ATC
ATC
ATC
Murata
Multicomp
Vishay
Panasonic
Vishay
Taconic
MRF8S9220HR3 MRF8S9220HSR3
4
RF Device Data
Freescale Semiconductor

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20.5
20
19.5
19
18.5
18
17.5
TYPICAL CHARACTERISTICS
20
19.6
VDD = 28 Vdc, Pout = 65 W (Avg.)
IDQ = 1600 mA, Single−Carrier
19.2 W−CDMA
3.84 MHz Channel Bandwidth
18.8 ηD
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
18.4
18 Gps
42
40
38
36
34
32
17.6 −31
IRL
17.2 −33
16.8
PARC
16.4
ACPR
−35
−37
16 −39
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 65 Watts Avg.
0
−5
−10
−15
−20
−25
0
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA
−10 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−20
IM3−U
−30
IM3−L
−40 IM5−U
IM5−L
−50 IM7−U
−60
1
IM7−L
10
100
TWO−TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two - Tone Spacing
1
0
−1
−1 dB = 59.8 W
−2
ACPR
ηD
60
50
40
Gps 30
−2 dB = 81.0 W
−3 −3 dB = 110.1 W
PARC 20
−4 VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−5
30 50 70 90 110
10
0
130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−25
−30
−35
−40
−45
−50
−55
−1.5
−2
−2.5
−3
−3.5
−4
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
5