D1413.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 D1413 데이타시트 다운로드

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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
www.DataSheet4U.com
2SD1413
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1023
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
40
5
3
0.5
20
150
-55~150
UNIT
V
V
V
A
A
W

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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA
VBEsat Base-emitter saturation voltage
IC=2A ;IB=4mA
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=6mA
VCC=30V ,RL=10Ω
Product Specification
www.DataSheet4U.com
2SD1413
MIN TYP. MAX UNIT
40 V
1.5 V
2.0 V
20 μA
2.5 mA
2000
1000
0.1 μs
1.0 μs
0.2 μs
2

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Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
www.DataSheet4U.com
2SD1413
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3