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SMD Type
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Transistors
NPN Silicon Epitaxial Transistor
2SD1615
Features
World Standard Miniature Package.
Low VCE(sat) VCE(sat) = 0.15 V
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Total power dissipation at 25 Ambient Temperature *2
Junction temperature
Storage temperature
* 1Pulse Test PW 10ms, Duty Cycle 50%.
*2 When mounted on ceramic substrate of 16 cm2X 0.7 mm
Symbol
VCBO
VCEO
VEBO
IC
IC
PT
Tj
Tstg
Rating
60
50
6
1
2
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle
2%
hFE Classification
Marking
hFE
GM
135 270
GL
200 400
Symbol
Testconditons
ICBO VCB = 60 V, IE = 0 A
IEBO VEB = 6.0 V, IC = 0 A
hFE VCE = 2.0 V, IC = 100 mA
VCE(sat) IC = 1 A, IB = 50 mA
VBE(sat) IC = 1 A, IB = 50 mA
VBE VCE = 2.0 V, IC = 50 mA
fT VCE = 2.0 V, IE = -100 mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
GK
300 600
Min Typ Max Unit
100 nA
100 nA
135 290 600
0.15 0.3 V
0.9 1.2 V
600 700 mV
80 160
MHz
19 pF
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