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Ordering number : ENA1242
CPH6442
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
CPH6442
Features
Low ON-resistance.
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
Ratings
60
±20
6
24
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : ZU
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
min
60
1.2
2.6
Ratings
typ
max
Unit
V
1 μA
±10 μA
2.6 V
4.4 S
33 43 mΩ
42 59 mΩ
46 65 mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61808PE TI IM TC-00001429 No. A1242-1/4

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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
CPH6442
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=6A
VDS=30V, VGS=10V, ID=6A
VDS=30V, VGS=10V, ID=6A
IS=6A, VGS=0V
www.DataSheet4U.com
Ratings
min typ max
Unit
1040
pF
90 pF
55 pF
12 ns
18 ns
80 ns
35 ns
20 nC
3.0 nC
4.2 nC
0.82
1.2 V
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
0.15
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=3A
RL=10Ω
D VOUT
CPH6442
P.G 50Ω S
ID -- VDS
6.0
5.5
5.0
4.5
4.0
3.5
3.0 3.0V
2.5
2.0
1.5
1.0
0.5 VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT13778
7
VDS=10V
6
ID -- VGS
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT13779
No. A1242-2/4

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CPH6442
RDS(on) -- VGS
100
90
80 ID=1.5A
3.0A
70
Ta=25°C
60
50
40
30
20
10
0 2 4 6 8 10 12
Gate-to-Source Voltage, VGS -- V
yfs-- ID
10
7 VDS=10V
5
14 16
IT13780
3
2
1.0
Ta=
--25°C
75°C
25°C
7
5
3
2
0.1
7
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
IT13782
SW Time -- ID
2
VDD=30V
VGS=10V
100 td(off)
7
5
3 tf
2
td(on)
10 t r
7
5
3
0.1 2 3
10
VDS=30V
9 ID=6A
8
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT13784
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Total Gate Charge, Qg -- nC
IT13786
RDS(onw)w-w- .DTaataSheet4U.com
100
90
80
70
60
50
40
30
VVGVGS=GS4=S.40=.V15,0VI.,0DIV=D,1=I.D51A.=53A.0A
20
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13781
IS -- VSD
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
3
2
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT13783
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
Ciss
3
2
100 Coss
7
5 Crss
3
2
0 10 20 30 40 50 60
Drain-to-Source Voltage, VDS -- V IT13785
ASO
5
3 IDP=24A
PW10μs
2
10
7
ID=6A
5
1m1s00μs
3
2
1.0
7
5
3
2
0.1
10ms
Operation in
is limited by
DC
this area
RDS(on).
operation10(0Tma=s25°C)
7
5
3 Ta=25°C
2 Single pulse
0.01 When mounted on ceramic substrate (900mm20.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT13787
No. A1242-3/4