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240pin DDR3 SDRAM Unbuffered DIMMs
DDR3 SDRAM Unbuffered DIMMs
Based on 1Gb A version
HMT164U6AFP(R)6C
HMT112U6AFP(R)8C
HMT112U7AFP(R)8C
HMT125U6AFP(R)8C
HMT125U7AFP(R)8C
** Contents are subject to change without prior notice.
Rev. 0.1 / Dec 2008
1

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Revision History
Revision No.
0.01
0.02
0.1
History
Initial draft for internal review
Added IDD & Halogen-free products
Initial Specification Release.
Corrected typo on package ball feature.
HMT1w6w4wU.D6aAtaFShPe(eRt4)U6.cCom
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
Draft Date
Nov. 2007
Mar. 2008
Dec 2008
Remark
Preliminary
Preliminary
Rev. 0.1 / Dec 2008
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Table of Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Features
1.1.2 Ordering Information
1.2 Speed Grade & Key Parameters
1.3 Address Table
2. Pin Architecture
2.1 Pin Definition
2.2 Input/Output Functional Description
2.3 Pin Assignment
3. Functional Block Diagram
3.1 512MB, 64Mx64 Module(1Rank of x16)
3.2 1GB, 128Mx64 Module(1Rank of x8)
3.3 1GB, 128Mx72 ECC Module(1Rank of x8)
3.4 2GB, 256Mx64 Module(2Rank of x8)
3.5 2GB, 256Mx72 ECC Module(2Rank of x8)
4. Address Mirroring Feature
4.1 DRAM Pin Wiring for Mirroring
5. Absolute Maximum Ratings
5.1 Absolute Maximum DC Ratings
5.2 Operating Temperature Range
6. AC & DC Operating Conditions
6.1 Recommended DC Operating Conditions
6.2 DC & AC Logic Input Levels
6.2.1 For Single-ended Signals
6.2.2 For Differential Signals
6.2.3 Differential Input Cross Point
6.3 Slew Rate Definition
6.3.1 For Ended Input Signals
6.3.2 For Differential Input Signals
6.4 DC & AC Output Buffer Levels
6.4.1 Single Ended DC & AC Output Levels
6.4.2 Differential DC & AC Output Levels
6.4.3 Single Ended Output Slew Rate
6.4.4 Differential Ended Output Slew Rate
6.5 Overshoot/Undershoot Specification
6.6 Input/Output Capacitance & AC Parametrics
6.7 IDD Specifications & Measurement Conditions
7. Electrical Characteristics and AC Timing
7.1 Refresh Parameters by Device Density
7.2 DDR3 Standard speed bins and AC para
8. DIMM Outline Diagram
8.1 512MB, 64Mx64 Module(1Rankx16)
8.2 1GB, 128Mx64 Module(1Rank of x8)
8.3 1GB, 128Mx72 ECC Module(1Rank of x8)
8.4 2GB, 256Mx64 Module(2Rank of x8)
8.5 2GB, 256Mx72 ECC Module(2Rank of x8)
Rev. 0.1 / Dec 2008
HMT1w6w4wU.D6aAtaFShPe(eRt4)U6.cCom
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
3

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HMT1w6w4wU.D6aAtaFShPe(eRt4)U6.cCom
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
1. Description
This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb A version. DDR3 SDRAMs in Fine
Ball Grid Array(FBGA) packages on a 240 pin glass-epoxy substrate. This DDR3 Unbuffered DIMM series based on 1Gb
A ver. provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable
for easy interchange and addition.
1.1 Device Features & Ordering Information
1.1.1 Features
• VDD=VDDQ=1.5V
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, /CK) operation
• Differential Data Strobe (DQS, /DQS)
• On chip DLL align DQ, DQS and /DQS transition with
CK transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)
supported
• Programmable additive latency 0, CL-1, and CL-2 sup
ported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 78ball
FBGA(x4/x8), 96ball FBGA(x16) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• On Die Thermal Sensor supported (JEDEC optional)
Rev. 0.1 / Dec 2008
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1.1.2 Ordering Information
Part Name
HMT164U6AFP6C-S6/S5/G8/G7/H9/H8
HMT164U6AFR6C-S6/S5/G8/G7/H9/H8
HMT112U6AFP8C-S6/S5/G8/G7/H9/H8
HMT112U6AFR8C-S6/S5/G8/G7/H9/H8
HMT112U7AFP8C-S6/S5/G8/G7/H9/H8
HMT112U7AFR8C-S6/S5/G8/G7/H9/H8
HMT125U6AFP8C-S6/S5/G8/G7/H9/H8
HMT125U6AFR8C-S6/S5/G8/G7/H9/H8
HMT125U7AFP8C-S6/S5/G8/G7/H9/H8
HMT125U7AFR8C-S6/S5/G8/G7/H9/H8
HMT1w6w4wU.D6aAtaFShPe(eRt4)U6.cCom
HMT112U6(7)AFP(R)8C
HMT125U6(7)AFP(R)8C
Density
Org.
# of # of
DRAMs ranks
Materials
ECC
TS
512MB 64Mx64
512MB 64Mx64
1GB 128Mx64
1GB 128Mx64
1GB 128Mx72
1GB 128Mx72
2GB 256Mx64
2GB 256Mx64
2GB 256Mx72
2GB 256Mx72
4
4
8
8
9
9
16
16
18
18
1 Lead-free None No
1 Halogen-free None No
1 Lead free None No
1 Halogen-free None No
1 Lead free ECC Yes
1 Halogen-free ECC Yes
2 Lead free None No
2 Halogen-free None No
2 Lead free ECC Yes
2 Halogen-free ECC Yes
Rev. 0.1 / Dec 2008
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