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Ordering number : ENN7783
CPH3235
www.DataSheet4U.com
CPH3235
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range .
Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm).
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : DF
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
Mounted on a ceramic board (600mm2!0.8m)
Conditions
VCB=30V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
Ratings
40
30
5
3
5
600
0.9
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
min
250
Ratings
typ
max
Unit
0.1 µA
0.1 µA
400
450 MHz
20 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62504EA TS IM TB-00000079 No.7783-1/4

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
CPH3235
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1.5A, IB=30mA
IC=1.5A, IB=75mA
IC=1.5A, IB=30mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
min
40
30
5
www.DataSheet4U.com
Ratings
typ
90
75
0.83
max
135
115
1.2
30
300
15
Unit
mV
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2150A
2.9
0.4
3
0.15
0.05
12
1.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
IC=20IB1= --20IB2=500mA
OUTPUT
RL
+
470µF
VCC=12V
IC -- VCE
3.0
20mA
15mA
2.5
10mA
8mA
2.0
6mA
1.5 4mA
1.0
2mA
0.5
0 IB=0
0
0.2 0.4 0.6 0.8
1.0
Collector-to-Emitter Voltage, VCE -- V IT06841
hFE -- IC
7
VCE=2V
5
Ta=75°C
25°C
3
--25°C
2
100
0.01
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
2 3 57
IT06843
3
VCE=2V
IC -- VBE
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT06842
VCE(sat) -- IC
3
IC / IB=20
2
0.1
7
5
3
2
0.01
7
5
0.01
Ta=75°C
--25°C
25°C
2 3 5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
23 5
IT06844
No.7783-2/4

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CPH3235
VCE(sat) -- IC
3
IC / IB=50
2
VBE(satw) w--w.IDCataSheet4U.com
3
IC / IB=50
2
0.1
7
5 25°C
3
Ta=75°C
--25°C
2
0.01
0.01
7
5
23
5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
fT -- IC
2 3 57
IT06845
VCE=10V
3
2
1.0 25°C
Ta= --25°C
7
75°C
5
3
2
0.01
100
23
5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
Cob -- VCB
2 3 57
IT06846
f=1MHz
7
5
3
100
7
5
0.01
23
10
7 ICP=5A
5
3 IC=3A
2
1.0
7
5
3
2
5 7 0.1 2 3 5 7 1.0
Collector Current, IC -- A
ASO
23 5
IT06847
100ms10m1sms
DC operation
10µs
100µs
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (600mm2!0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Collector-to-Emitter Voltage, VCE -- V IT06849
2
10
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2 3 5 7 1.0
2 3 5 7 10
Collector-to-Base Voltage, VCB -- V
PC -- Ta
23
IT06848
Mounted on a ceramic board (600mm 2!
0.8mm)
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06850
No.7783-3/4