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Ordering number : ENN7368A
CPH3323
www.DataSheet4U.com
CPH3323 P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--60
±20
--1
--4
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : JY
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.5A
ID=--0.5A, VGS=--10V
ID=--0.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--60
--1.2
0.6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
1.2 S
0.58
0.76
0.78
1.1
180 pF
15 pF
11 pF
8 ns
3 ns
30 ns
25 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62504 TS IM / 90503 TS IM TA-100518 No.7368-1/4

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Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
CPH3323
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--30V, VGS=--10V, ID=--1A
VDS=--30V, VGS=--10V, ID=--1A
VDS=--30V, VGS=--10V, ID=--1A
IS=--1A, VGS=0
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Ratings
min typ max
Unit
5.0 nC
0.8 nC
0.8 nC
--0.89
--1.2 V
Package Dimensions
unit : mm
2152A
2.9
0.4
3
12
1.9
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --0.5A
RL=60
D VOUT
CPH3323
P.G 50S
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
0
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
0
ID -- VDS
4.5V
4.03V.5V
3.0V
VGS=2.5V
--0.2
--0.4
--0.6
--0.8
--1.0
Drain-to-Source Voltage, VDS -- V IT05476
RDS(on) -- VGS
Ta=25°C
ID= --0.5A
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT05478
--2.0
VDS=10V
--1.8
ID -- VGS
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
--60
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT05477
I DI=D0=.50A.5,AV,GVSG=4SV=10V
--40 --20 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- °C
IT05479
No.7368-2/4

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CPH3323
yfs-- ID
5
VDS= --10V
3
2
25°C
1.0
7
5
Ta= --25°C75°C
3
2
0.1
--0.01
100
7
5
3
2
23
5 7 --0.1 2 3 5 7 --1.0 2 3
Drain Current, ID -- A
SW Time -- ID
IT05480
VDD= --30V
VGS= --10V
td(off)
tf
10 td(on)
7
5
3 tr
2
1.0
--0.1
2
--10
VDS= --30V
ID= --1A
--8
3 5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
23
IT05482
--6
--4
--2
0
0123456
Total Gate Charge, Qg -- nC
IT05484
PD -- Ta
1.2
5 IF -- VwSwDw.DataSheet4U.com
VGS=0
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
1000
7
5
3
2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT05481
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
2 Coss
10 Crss
7
5
3
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT05483
ASO
--10
7
5
IDP= --4A
<10µs
3
2
ID= --1A
--1.0
7
5
10ms
3
2
--0.1
7 Operation in this
5 area is limited by RDS(on).
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (900mm2!0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT05485
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05486
No.7368-3/4