IXTT6N120.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 IXTT6N120 데이타시트 다운로드

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High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
IXTH 6N120
IXTT 6N120
www.DataSheet4U.com
VDSS
ID25
RDS(on)
= 1200 V
= 6A
= 2.6
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
1200
1200
±20
±30
6
V
V
V
V
A
24 A
6A
25 mJ
500 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
1200
V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
2.6
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99024B(01/04)

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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
35
S
1950
175
60
pF
pF
pF
28 ns
33 ns
42 ns
18 ns
56 nC
13 nC
25 nC
0.42 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
6A
24 A
1.5 V
Trr IF = 6A
-di/dt = 100 A/µs
850 ns
IXTH 6N120
wIwXwT.DTata6ShNee1t42U.0com
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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Fig. 1. Output Characteristics
@ 25 Deg. C
6
VGS = 10V
5 9V
8V
4 7V
3 6V
2
1 5V
0
0 2 4 6 8 10 12 14 16
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
6
VGS = 10V
5 9V
8V
4
7V
6V
3
2
5V
1
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
2.8
2.5 VGS = 10V
2.2
TJ = 125ºC
1.9
1.6
1.3 TJ = 25ºC
1
0.7
0 1.5 3 4.5 6 7.5 9
ID - Amperes
© 2004 IXYS All rights reserved
IXTH 6N120
IXTT 6N120
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25 deg. C
10
VGS = 10V
8 9V
8V
7V
6
4 6V
2
0
0
5V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
ID = 6A
1.6
1.3 ID= 3A
1
0.7
0.4
-50
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Drain Current vs. Case
T emperature
7
6
5
4
3
2
1
0
-50
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150