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Ordering number:ENN927E
PNP/NPN Epitaxial Planar Silicon Dawrwlinwg.DtoantaTSrhaenesti4sUto.crosm
2SB885/2SD1195
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
· High DC current gain.
· High current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2010C
[2SB885/2SD1195]
10.2
3.6 5.1
4.5
1.3
1.2
( ) : 2SB885
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
VCB=(–)80V, IE=0
VEB=(–)5V, IC=0
VCE=(–)3V, IC=(–)2.5A
VCE=(–)5V, IC=(–)2.5A
VCE(sat) IC=(–)2.5A, IB=(–)5mA
VBE(sat) IC=(–)2.5A, IB=(–)5mA
0.8
123
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Ratings
(–)110
(–)100
(–)6
(–)5
(–)8
1.75
35
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 mA
(–)3.0 mA
1500 4000
20 MHz
0.9 (–)1.5 V
(–1.0)
V
(–)2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1002AS (KT)/91098HA (KT)/10996TS (KOTO) 8-4330/D251MH/4027KI/D152KI, TS No.927–1/4

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Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB885/2SD1195
Symbol
Conditions
V(BR)CBO IC=(–)5mA, IE=0
V(BR)CEO IC=(–)50mA, RBE=
ton See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
www.DataSheet4U.com
Ratings
min typ
(–)110
(–)100
(0.7)
0.6
(1.3)
4.8
(1.5)
1.6
max
Unit
V
V
µs
µs
µs
µs
µs
µs
Switching Time Test Circuit
PW=50µs, Duty Cycle1%
500IB1= --500IB2=IC=2A
OUTPUT
INPUT
50
RB
VR
TUT
RL
25
Electrical Connection
C
C
B
6k200
2SB885
E
B
6k200
2SD1195
E
+
100µF
VBE= --5V
+
470µF
VCC=50V
(For PNP, the polarity is reversed.)
--10
From top
--50mA
--45mA
--8 --40mA
--35mA
--30mA
--6 --25mA
--20mA
--15mA
--4
IC -- VCE
2SB885
--10mA
--5mA
--2
0 IB=0
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR08593
--8
From top
IC -- VCE
2SB885
--5.0mA
--4.5mA
--6 --4.0mA
--3.5mA
--3.0mA
--2.5mA
--4 --2.0mA
--1.5mA
--1.0mA
--2 --0.5mA
0 IB=0
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR08595
10
From top
10mA
9mA
8 8mA
7mA
6mA
6 5mA
4
IC -- VCE
4mA
2SD1195
3mA
2mA
1mA
2
0 IB=0
012345
Collector-to-Emitter Voltage, VCE – V ITR08594
8
From top
IC -- VCE
2SD1195
1000µA
900µA
6 800µA
700µA
600µA
500µA
4
400µA
2 300µA
200µA
0 IB=0
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE – V ITR08596
No.927–2/4

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2SB885/2SD1195
IC -- VBE
--5
2SB885
IC -- wVwBwE.DataSheet4U.com
5
2SD1195
VCE= --3V
VCE=3V
--4 4
--3 3
--2 2
--1
0
--0.4
2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
--0.1
--10
7
5
3
2
--0.8 --1.2 --1.6 --2.0 --2.4
Base-to-Emitter Voltage, VBE – V ITR08597
hFE -- IC
Ta=120°C
2SB885
VCE= --3V
25°C
--40°C
23
5 7 --1.0
23
Collector Current, IC – A
VCE(sat) -- IC
5 7 --10
ITR08599
2SB885
IC / IB=500
--1.0 Ta= --40°C
25°C
7
120°C
5
3
--0.1
--10
7
5
23
5 7 --1.0
23
Collector Current, IC – A
VBE(sat) -- IC
5 7 --10
ITR08601
2SB885
IC / IB=500
3
2
--1.0
7
5
--0.1
Ta= --40°C
25°C
120°C
23
5 7 --1.0
23
Collector Current, IC – A
5 7 --10
ITR08603
1
0
0.4
2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
0.1
10
7
5
3
2
0.8 1.2 1.6 2.0 2.4
Base-to-Emitter Voltage, VBE – V ITR08598
hFE -- IC
Ta=120°C
2SD1195
VCE=3V
25°C
--40°C
23
5 7 1.0
23
Collector Current, IC – A
VCE(sat) -- IC
5 7 10
ITR08600
2SD1195
IC / IB=500
1.0
7
5
3
0.1
10
7
5
Ta= --40°C
25°C
120°C
23
5 7 1.0
23
Collector Current, IC – A
VBE(sat) -- IC
5 7 10
ITR08602
2SD1195
IC / IB=500
3
2
1.0
7
5
0.1
Ta= --40°C
25°C
120°C
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
ITR08604
No.927–3/4