STB772.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 STB772 데이타시트 다운로드

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Semiconductor
Description
Suitable for low voltage large current drivers
Excellent hFE Linearity
Complementary pair with STD882
Switching Application
Ordering Information
Type NO.
STB772
Outline Dimensions
Marking
STB772
6.5±0.2
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STB772
PNP Silicon Transistor
Package Code
MPT
unit : mm
0.70 Max.
0.4~0.6
1.2 Max.
12 3
2.5±0.1.
5.0±0.2
KST-B015-001
PIN Connections
1. Emitter
2. Collector
3. Base
1

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STB772
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Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
VCBO
Collector-Emitter voltage
VCEO
Emitter-Base voltage
VEBO
Collector current
IC
Collector dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
* : When mounted on 40×40×0.8mm ceramic substate
Ratings
-15
-12
-5
-5
1.2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat1)
VBE(sat)
fT
Cob
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-12V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-500mA
VCE=-2V, IC=-3A
IC=-3A, IB=-150mA
IC=-3A, IB=-150mA
VCB=-5V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-15 - - V
-12 - - V
-5 - - V
- - -1 µA
- - -1 µA
160 - 320 -
40 - - -
- - -0.5 V
- - -1.2 V
- 150 - MHz
- - 50 pF
KST-B015-001
2

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Electrical Characteristic Curves
Fig. 1 Pc - Ta
Fig. 2 Ic - VBE
STB772www.DataSheet4U.com
Fig. 3 hFE - IC
Fig. 4 VCE(sat) - IC
KST-B015-001
3