OD-24X24-C.pdf 데이터시트 (총 1 페이지) - 파일 다운로드 OD-24X24-C 데이타시트 다운로드

No Preview Available !

HIGH-POWER GaAlAs EMITTER CHIPS
OD-24x24-C
www.DataSheet4U.com
.024
.005
.006 D
2 PLACES
.024
EMITTING
SURFACE
GOLD
CONTACTS
.005
.006 .006
N .003
P .005
FEATURES
• High current capability
• 2 bond pads for uniform output
• Gold contacts for high reliability bonding
• High reliability LPE GaAlAs IRLED chips
All dimensions are nominal values in inches unless
otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, LP
Spectral Bandwidth at 50%, $L
TEST CONDITIONS
IF = 100mA
IF = 50mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 200mA
IR = 10MA
VR = 0V
Fall Time
MIN
TYP
MAX
UNITS
7 10
mW
880 nm
80 nm
1.6 2 Volts
5 30
Volts
60 pF
0.7 Msec
0.7 Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
Continuous Forward Current
Peak Forward Current (10Ms, 300 Hz)
Reverse Voltage
Storage and Operating Temperature Range
Maximum Junction Temperature
400mW
200mA
7A
5V
-65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com