70TPS16PBF.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 70TPS16PBF 데이타시트 다운로드

No Preview Available !

70TPS..PbF High Voltage Series
Vishay HighwPwow.wDaetarShPereot4dU.cuocmts
Phase Control SCR, 70 A
2
(A)
Super-247
PRODUCT SUMMARY
VT at 100 A
ITSM
VRRM
1 (K) (G) 3
< 1.4 V
1400 A
1200/1600 V
DESCRIPTION/FEATURES
The 70TPS..PbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
high and medium power switching and phase
control applications.
Available
RoHS*
COMPLIANT
Typical applications are in input rectification (soft start) or
AC-switches or high current crow-bar as well as others
phase-control circuits. These products are designed to be
used with Vishay HPP input diodes, switches and output
rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
Sinusoidal waveform
Lead current limitation
VRRM/VDRM
Range
ITSM
VT 100 A, TJ = 25 °C
dV/dt
dI/dt
TJ
VALUES
70
75
1200/1600
1400
1.4
500
150
- 40 to 125
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
70TPS12PbF
70TPS16PbF
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1200
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1300
1700
IRRM/IDRM
AT 125 °C
mA
15
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94391
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

No Preview Available !

70TPS..PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 70 A
www.DataSheet4U.co
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum continuous RMS on-state
current as AC switch
IT(AV)
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
dI/dt
IH
IL
Maximum reverse and direct leakage current IRRM/IDRM
Maximum rate of rise of off-state voltage
dV/dt
TEST CONDITIONS
TC = 82 °C, 180° conduction half sine wave
Lead current limitation
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
Initial TJ = TJ
maximum
TJ = 125 °C
100 A, TJ = 25 °C
TJ = 25 °C
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
VALUES UNITS
70
75
1200
1400
7200
10 200
102 000
0.916
1.21
4.138
3.43
1.4
150
200
400
1.0
15
500
A
A2s
A2s
V
mΩ
V
A/µs
mA
V/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate
voltage to trigger
SYMBOL
PGM
PG(AV)
IGM
- VGM
VGT
Maximum required DC gate current to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
IGT
VGD
IGD
T = 30 µs
TEST CONDITIONS
TJ = - 40 °C
TJ = 25 °C
Anode supply = 6 V resistive load
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = 120 °C, VDRM = Rated value
VALUES UNITS
10
W
2.5
2.5 A
10
4.0
V
1.5
1.1
270
100 mA
80
0.25 V
6 mA
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94391
Revision: 06-Jun-08

No Preview Available !

70TPS..PbF High Voltage Series
Phase Control SCR, 70 A Vishay HighwPwow.wDaetarShPeerot4Ud.cuocmts
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TJ
TStg
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style Super-247
VALUES
- 40 to 125
- 40 to 150
0.27
UNITS
°C
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
70TPS12
70TPS16
ΔRthJ-hs CONDUCTION PER JUNCTION
DEVICE
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
70TPS
0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
°C/W
Document Number: 94391
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3