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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
www.DataSheet4U.com
2SD1308
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2SB974
APPLICATIONS
·For audio frequency power amplifier and
low speed switching industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
TC=25
Ta=25
Tj Junction temperature
Tstg Storage temperature
VALUE
100
100
7
5
10
0.5
30
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W

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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=2mA
VBEsat Base-emitter saturation voltage
IC=2A; IB=2mA
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=100V ;IE=0
VEB=7V; IC=0
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2A; IB1=-IB2=2mA
RL=25Ω; VCC50V
‹ hFE-1 classifications
ML
K
2000-5000 4000-10000 8000-20000
Product Specification
www.DataSheet4U.com
2SD1308
MIN TYP. MAX UNIT
100 V
1.5 V
2.0 V
1.0 μA
5.0 mA
2000
20000
500
1.0 μs
3.5 μs
1.2 μs
2

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Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
www.DataSheet4U.com
2SD1308
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3