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CQDD-12M
CQDD-12N
12 AMP TRIAC
600 THRU 800 VOLTS
CentralTM
www.DataSheet4U.com
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-12M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=8.3ms)
I2t Value for Fusing (t=8.3ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM
IT(RMS)
ITSM
I2t
PGM
PG (AV)
IGM
VGM
di/dt
Tstg
TJ
ΘJA
ΘJC
CQDD CQDD
-12M -12N
600 800
12
80
27
40
1.0
4.0
16
10
-40 to +150
-40 to +125
60
2.7
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM
Rated VDRM, TC=125°C
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
IT=100mA
VD=12V, RL=10Ω, QUAD I, II, III
VD=12V, RL=10Ω, QUAD IV
ITM=17A, tp=380µs
VD=2/3 VDRM, RGK=∞, TC=125°C
10
TYP
9.9
24.3
14.1
1.10
2.10
1.33
MAX
10
500
20
50
25
1.50
2.50
1.50
UNITS
V
A
A
A2s
W
W
A
V
A/µs
°C
°C
°C/W
°C/W
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
R1 (24-September 2004)

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CentralTM
Semiconductor Corp.
CQDD-12M
CQDD-12N
www.DataSheet4U.com
12 AMP TRIAC
600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
SYMBOL
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.163 0.189 4.14 4.80
0.045 0.055 1.14 1.40
0.000 0.010 0.00 0.25
0.012 0.028 0.30 0.70
0.386 0.409 9.80 10.40
0.378 0.417 9.60 10.60
0.335 0.358 8.50 9.10
0.197 0.236 5.00 6.00
0.093 0.108 2.35 2.75
0.030 0.035 0.75 0.90
D2PAK (REV: R2)
R1 (24-September 2004)