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APTGT75DU120Twww.DataSheet4U.com
Dual common source
Fast Trench + Field Stop IGBT®
Power Module
G1
E1
NTC1
C1
Q1
C2
Q2
E
G2
E2
NTC2
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
110
75
175
±20
357
150A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGT75DU120Twww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
250 µA
VGE = 15V
IC = 75A
Tj = 25°C
Tj = 125°C
1.7 2.1
2.0
V
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Min Typ Max Unit
5345
280 pF
240
280
40
450 ns
75
290
45 ns
550
90
7 mJ
8
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
1200
V
250
500
µA
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
50% duty cycle
IF = 75A
IF = 75A
VR = 600V
di/dt =2000A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
75 A
1.6 2.1
1.6
V
170 ns
280
7 µC
14
APT website – http://www.advancedpower.com
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Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max
R25
B 25/85
Resistance @ 25°C
T25 = 298.15 K
RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Wt Package Weight
Min Typ Max Unit
0.35
0.58
°C/W
2500
V
-40 150
-40 125 °C
-40 125
1.5 4.7 N.m
160 g
Package outline (dimensions in mm)
APT website – http://www.advancedpower.com
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Typical Performance Curve
Output Characteristics (VGE=15V)
150
125
TJ=25°C
TJ=125°C
100
75
50
25
0
01234
VCE (V)
Output Characteristics
150
TJ = 125°C
125
VGE=17V
VGE= 13V
100
VGE=15V
75 VGE=9V
50
25
0
01234
VCE (V)
Transfert Characteristics
150
125 TJ=25°C
100 TJ=125°C
75
50
TJ=125°C
25
0
5 6 7 8 9 10 11 12
VGE (V)
Switching Energy Losses vs Gate Resistance
16
14
VCE = 600V
VGE =15V
12 IC = 75A
10 TJ = 125°C
Eon
Eoff
8
6 Er
4
2
0
0 4 8 12 16 20 24 28 32
Gate Resistance (ohms)
Energy losses vs Collector Current
16
14
VCE = 600V
VGE = 15V
12 RG = 4.7
10 TJ = 125°C
8
E of f
Eon
6 Er
4
2
0
0 25 50 75 100 125 150
IC (A)
Reverse Bias Safe Operating Area
175
150
125
100
75 VGE=15V
50 TJ=125°C
RG=4.7
25
0
0
400
800
1200
1600
VCE (V)
0.4
0.35 0.9
0.3
0.7
0.25
0.2 0.5
0.15 0.3
0.1 0.1
0.05 0.05
0
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT website – http://www.advancedpower.com
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Operating Frequency vs Collector Current
60
50
ZCS
40
30
ZVS
VCE=600V
D=50%
RG=4.7
TJ=125°C
Tc=75°C
20
10
Hard
switc hing
0
0 20
40
60
IC (A)
80
100 120
Forward Characteristic of diode
150
125 TJ=25°C
100
75 TJ=125°C
50
TJ =125°C
25
TJ =25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2 0.3
0.1 0.1
0.05
0
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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