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Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 75A @ Tc = 80°C
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
100
75
140
±20
250
150A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 75A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE, IC = 600µA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
4620
300
140
110
45
200
40
120
50
250
60
0.35
0.6
2.2
2.6
pF
ns
ns
mJ
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
600
VR=600V
Tj = 25°C
Tj = 150°C
250
500
Tc = 80°C
75
IF = 75A
VGE = 0V
IF = 75A
VR = 300V
di/dt =2000A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
1.6 2
1.5
100
150
3.6
7.6
0.85
1.8
V
µA
A
V
ns
µC
mJ
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Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25
B 25/85
Resistance @ 25°C
T25 = 298.15 K
RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Max
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Wt Package Weight
SP3 Package outline (dimensions in mm)
Min Typ Max Unit
0.60
0.98
°C/W
2500
V
-40 175
-40 125 °C
-40 100
2.5 4.7 N.m
110 g
1 12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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Typical Performance Curve
Output Characteristics (VGE=15V)
150
TJ=25°C
125
TJ =125°C
100 TJ=150°C
75
50
25
0 TJ=25°C
0 0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
150
TJ = 150°C
125
VGE=19V
100
VGE=13V
75 VGE=15V
50
VGE=9V
25
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
150
125
100
75
50
25
0
5
Transfert Characteristics
TJ=25°C
TJ= 150°C
TJ=125°C
TJ=25°C
6 7 8 9 10 11 12
VGE (V)
Energy losses vs Collector Current
5
VCE = 300V
4
VGE = 15V
RG = 4.7
TJ = 150°C
3
E of f
Er
2
Eon
1
0
0 25 50 75 100 125 150
IC (A)
Switching Energy Losses vs Gate Resistance
5
VCE = 300V
4
VGE =15V
IC = 75A
TJ = 150°C
3
Eoff
Eon
2
1
Eon
Er
0
0 5 10 15 20 25 30 35 40
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
175
150
125
100
75
50 VGE=15V
25 TJ=150°C
RG=4.7
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6 0.9
IGBT
0.5 0.7
0.4
0.5
0.3
0.3
0.2
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
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Operating Frequency vs Collector Current
120
100
80 ZVS
VCE=300V
D=50%
RG=4.7
TJ =150°C
Tc=85°C
60 ZCS
40
Hard
20 switching
0
0 20 40 60 80 100
IC (A)
Forward Characteristic of diode
150
125
100
75
50
25
0
0
TJ=125°C
TJ =150°C
TJ= 25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
Diode
1 0.9
0.8 0.7
0.6 0.5
0.4 0.3
0.2 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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