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Dual common source
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 50A @ Tc = 80°C
G1
E1
NTC1
C1
Q1
C2
Q2
E
G2
E2
NTC2
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
75
50
100
±20
312
100A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
250 µA
VGE = 15V
IC = 50A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10
VGE = 15V
VBus = 900V
IC = 50A
RG = 10
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
4400
180 pF
150
370
40 ns
650
180
400
50
800 ns
300
16
mJ
15
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
Test Conditions
Min Typ Max Unit
1700
V
VR=1700V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 80°C
50
A
IF = 50A
IF = 50A
VR = 900V
di/dt =800A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2
1.9
V
385 ns
490
14 µC
23
6 mJ
12
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Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25
B 25/85
Resistance @ 25°C
T25 = 298.15 K
RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Max
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Wt Package Weight
Min Typ Max Unit
0.4
0.7
°C/W
3500
V
-40 150
-40 125 °C
-40 100
2.5 4.7 N.m
160 g
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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Typical Performance Curve
Output Characteristics (VGE=15V)
100
80 TJ=25°C
Output Characteristics
100
TJ = 125°C VGE=20V
80
60 60
TJ=125°C
VGE=13V
40 40 VGE=15V
20 20 VGE=9V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VCE (V)
0
012345
VCE (V)
Transfert Characteristics
100
TJ =25°C
80
60
40
TJ=125°C
20
TJ=125°C
0
5 6 7 8 9 10 11 12 13
VGE (V)
Switching Energy Losses vs Gate Resistance
50
VCE = 900V
40 VGE =15V
IC = 50A
30 TJ = 125°C
Eon
20 Eoff
10
0
0
Er
10 20 30 40 50 60 70 80
Gate Resistance (ohms)
Energy losses vs Collector Current
50
VCE = 900V
40 VGE = 15V
RG = 10
30 TJ = 125°C
Eon
E of f
20
10 Er
0
0 20 40 60 80 100
IC (A)
Reverse Bias Safe Operating Area
125
100
75
50
V GE=15V
25 TJ=125°C
RG= 10
0
0 400
800 1200
VCE (V)
1600
2000
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4 0.9
IGBT
0.35
0.3 0.7
0.25
0.2 0.5
0.15 0.3
0.1
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
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Operating Frequency vs Collector Current
30
25
20 ZVS
15
ZCS
VCE=900V
D=50%
RG=10
TJ=125°C
TC=75°C
10
5 hard
switching
0
0 10 20 30 40 50 60 70 80
IC (A)
100
90
80
70
60
50
40
30
20
10
0
0
Forward Characteristic of diode
TJ =25°C
TJ= 125°C
TJ=125°C
0.5 1 1.5 2 2.5
VF (V)
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 0.9
Diode
0.6
0.5 0.7
0.4 0.5
0.3 0.3
0.2
0.1 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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