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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08L083WC2C
Advance Information
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
1024K × 8 bit
Overview
Features
The N08L083WC2C is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 1,048,576 words by 8 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. The
N08L083WC2C is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 512Kb x
16 SRAMs
Product Family
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Part Number
Package Type
Operating
Temperature
N08L083WC2CT1 44 TSOP II Pb Free -40oC to +85oC
Power
Supply (Vcc)
Speed
2.2V - 3.6V 55ns
Standby
Current
(ISB),
Typical
Operating Current
(Icc), Typical
2 µA 1.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A4
A3
A2
A1
A0
CE
DNU
DNU
I/O0
I/O1
VCC
VSS
I/O2
I/O3
DNU
DNU
WE
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 CE2
39 A8
38 DNU
37 DNU
36 I/O7
35 I/O6
34 VSS
33 VCC
32 I/O5
31 I/O4
30 DNU
29 DNU
28 A9
27 A10
26 A11
25 A12
24 A13
23 A14
Pin Name
A0-A19
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A19
Page
Address
Decode
Logic
CE1
CE2
WE
OE
Control
Logic
1024K
x 8 bit
RAM Array
N08L083WC2C
Advance Information
www.DataSheet4U.com
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE OE
I/O0 - I/O7
MODE
HXXX
XLXX
L H L X1
High Z
High Z
Data In
Standby
Standby
Write3
L HH L
L HHH
Data Out
High Z
Read
Active
1. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
POWER
Standby
Standby
Active
Active
Active
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min
Max
10
10
Unit
pF
pF
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N08L083WC2C
Advance Information
www.DataSheet4U.com
Absolute Maximum Ratings
Item
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
–65 to 150
-40 to +85
260oC, 10sec
Unit
V
V
mW
oC
oC
oC
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min. Typ1 Max Unit
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ fmax
Maximum Standby Current
Maximum Data Retention Current
VCC
VDR Chip Disabled
VIH
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ISB1
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
IOH = -0.1mA, Vcc = 2.2V
IOH = -1.0mA, Vcc = 2.7V
IOL = 0.1mA, Vcc = 2.2V
IOL = 2.1mA, Vcc = 2.7V
VIN = 0 to VCC
VOUT = 0 to VCC
Output Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=3.6 V, VIN=VIH or VIL Chip
Enabled, IOUT = 0
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.6 V
-L
-L
-L
IDR
Vcc = 1.5V, CE Vcc - 0.2V,
VIN Vcc - 0.2V or VIN 0.2V -L
2.2 3.0 3.6 V
1.5 V
1.8
2.2
VCC+0.3
VCC+0.3
V
-0.3 0.6 V
-0.3 0.8
2.0
V
2.4
0.4
V
0.4
-1 1 µA
-1 1 µA
1.5 3.0
1.5 3.0 mA
12.0
12.0
20.0
15.0
mA
2.0 20
2.0 8 µA
10
4
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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