SI7911DN.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SI7911DN 데이타시트 다운로드

No Preview Available !

New Product
Si7911DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.051 @ VGS = - 4.5 V
- 20 0.067 @ VGS = - 2.5 V
0.094 @ VGS = - 1.8 V
ID (A)
- 5.7
- 5.0
- 4.2
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr
Package
APPLICATIONS
D Portable
- PA Switch
- Battery Switch
- Load Switch
PowerPAK 1212-8
S1 S2
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Ordering Information: Si7911DN-T1
Bottom View
G1
D1
P-Channel MOSFET
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 20
"8
- 5.7 - 4.2
- 4.1 - 3.0
- 20
- 2.1 - 1.1
2.5 1.3
1.3 0.85
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
40
75
5.6
Maximum
50
94
7
Unit
_C/W
www.vishay.com
1

No Preview Available !

Si7911DN
Vishay Siliconix
New Product
www.DataSheet4U.com
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85_C
VDS v - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.7 A
VGS = - 2.5 V, ID = - 5.0 A
VGS = - 1.8 V, ID = - 1.1 A
VDS = - 6 V, ID = - 5.7 A
IS = - 2.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 20
0.040
0.054
0.075
14
- 0.8
- 1.0
"100
-1
-5
0.051
0.067
0.094
- 1.2
V
nA
mA
A
W
S
V
9.5 15
1.6 nC
2.5
7.2 W
20 30
35 55
70 105 ns
40 60
25 50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
8
4
0
0
www.vishay.com
2
Output Characteristics
VGS = 5 thru 2.5 V
2V
1.5 V
1V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
20
TC = - 55_C
16 25_C
12 125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03

No Preview Available !

New Product
Si7911DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
0.16
0.12
VGS = 1.8 V
0.08
0.04
VGS = 2.5 V
VGS = 4.5 V
0.00
0 4 8 12 16
ID - Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 5.7 A
4
20
1200
900 Ciss
600
300
Crss
0
0
4
Coss
8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 5.7 A
1.4
3 1.2
2 1.0
1 0.8
0
0 2 4 6 8 10 12
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
TJ = 150_C
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
ID = 1.1 A
ID = 5.7 A
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
0.04
0.00
0
1234
VGS - Gate-to-Source Voltage (V)
5
www.vishay.com
3

No Preview Available !

Si7911DN
Vishay Siliconix
New Product
www.DataSheet4U.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
30
0.3 25
Single Pulse Power
0.2
ID = 250 mA
0.1
0.0
- 0.1
20
15
10
5
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
0.001 0.01
0.1 1
Time (sec)
10
Safe Operating Area, Junction-To-Ambient
100
rDS(on) Limited
IDM Limited
10 P(t) = 0.0001
1
0.1
0.01
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1 10
VDS - Drain-to-Source Voltage (V)
100
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 75_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
www.vishay.com
4
Document Number: 72340
S-31612—Rev. A, 11-Aug-03

No Preview Available !

New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1 0.05
0.02
Single Pulse
Si7911DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (sec)
10 - 1
1
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
5