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DCR2400B85www.DataSheet4U.com
Phase Control Thyristor
Preliminary Information
DS5746-3.5 January 2009 (LN 26573)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
8500V
2370A
32500A
1500V/µs
300A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR2400B85*
DCR2400B80
DCR2400B75
DCR2400B70
8500
8000
7500
7000
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
*8200V @ -40oC, 8500V @ 0oC
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Outline type code: B
(See Package Details for further information)
Fig. 1 Package outline
For example:
DCR2400B85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS) RMS value
IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR2400B85
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Max. Units
2370
3723
3500
A
A
A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current
I2t I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
32.5
5.28
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 76.0kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
Anode DC
Cathode DC
Double side
Single side
-
-
-
-
-
-
-
-55
68.0
0.007
0.0116
0.0181
0.0014
0.0028
135
125
125
84.0
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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SEMICONDUCTOR
DCR2400B85
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DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10 ,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level
500 to 2400A at Tcase = 125°C
Threshold voltage – High level
2400 to 72000A at Tcase = 125°C
rT On-state slope resistance – Low level 500A to 2400A at Tcase = 125°C
On-state slope resistance – High level
2400A to 72000A at Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS Stored charge
IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL Latching current
Tj = 25°C, VD = 5V
-
-
-
-
-
-
-
-
-
600
6200
-
300
1500
150
300
1.037
1.229
0.487
0.398
3
1000
9000
3
mA
V/µs
A/µs
A/µs
V
V
m
m
µs
µs
µC
A
IH Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
- 300 mA
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SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage
VGD Gate non-trigger voltage
IGT Gate trigger current
IGD Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
DCR2400B85
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Max. Units
1.5 V
0.4 V
400 mA
15 mA
CURVES
7000
6000
5000
4000
3000
2000
1000
min 125°C
max 125°C
min 25°C
max 25°C
0
1.0 2.0 3.0 4.0 5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D. IT
Where A = 0.907134
B = -0.011004
C = 0.000304
D = 0.012936
these values are valid for Tj = 125°C for IT 500A to 7200A
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SEMICONDUCTOR
DCR2400B85
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16
14
12
10
8
6
180
120
4 90
60
2 30
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
130
120 180
110 120
90
100 60
90 30
80
70
60
50
40
30
20
10
0
0 1000 2000 3000 4000
Mean on-state current, IT(AV) - (A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
180
120
90
60
30
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
12
10
8
6
d.c.
4 180
120
90
2 60
30
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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