AP6679GJ.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 AP6679GJ 데이타시트 다운로드

No Preview Available !

Advanced Power
Electronics Corp.
www.DataSheet4U.com
AP6679GH/J
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
Description
G
D
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
-30V
9mΩ
-75A
G
D S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
-30
+25
-75
-50
-300
89
0.71
-55 to 150
-55 to 150
Value
1.4
110
Units
V
V
A
A
A
W
W/
Units
/W
/W
Data and specifications subject to change without notice
1
200811053

No Preview Available !

AP6679GH/J
www.DataSheet4U.com
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=-4.5V, ID=-24A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-24A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ±25V
ID=-16A
Gate-Source Charge
VDS=-24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-16A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=0.94Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
-30 - - V
- -0.03 - V/
- - 9 m
- - 15 m
-1 - -3 V
- 34 -
S
- - -1 uA
- - -25 uA
- - +100 nA
- 42 67 nC
- 6 - nC
- 25 - nC
- 11 - ns
- 35 - ns
- 58 - ns
- 78 - ns
- 2870 4590 pF
- 960 - pF
- 740 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-24A, VGS=0V
IS=-16A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 47 - ns
- 43 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

No Preview Available !

280
240 T C =25 o C
200
160
120
-10V
-8.0V
-6.0V
-4.5V
80
40 V G =-3.0V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
15
I D = -24A
T C =25
13
11
9
7
3579
-V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =150 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
150
T C =150 o C
100
www.DataSheet4U.com
AP6679GH/J
-10V
-8.0V
-6.0V
-4.5V
50
V G =-3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D = -30A
V G = -10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.2
1.8
1.4
1
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

No Preview Available !

AP6679GH/J
7
6
5
I D = -16A
4 V DS = -24V
3
2
1
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
www.DataSheet4U.com
f=1.0MHz
10000
C iss
C1000
oss
C rss
100
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100us
100
1ms
10
T C =25 o C
Single Pulse
10ms
100ms
1s
DC
1
0.1 1
10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4

No Preview Available !

ADVANCED POWER ELECTRONICS CORP.www.DataSheet4U.com
Package Outline : TO-252
D
D1
E2
E3
E1
B1 F1
ee
F
SYMBOLS
A2
A3
B1
D
D1
E3
F
F1
E1
E2
e
C
Millimeters
MIN NOM MAX
1.80 2.30 2.80
0.40 0.50 0.60
0.40 0.70 1.00
6.00 6.50 7.00
4.80 5.35 5.90
3.50 4.00 4.50
2.20 2.63 3.05
0.50 0.85 1.20
5.10 5.70 6.30
0.50 1.10 1.80
-- 2.30 --
0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
A2 R : 0.127~0.381
A3 (0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
6679GH
YWWSSS
LOGO
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
YLast Digit Of The Year
WW Week
SSSSequence
5