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Data Sheet
HGTG18N120BN
December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
wwwc.DoanttraoSlhs,epeot4wUe.cr osmupplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49288.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BN
TO-247
G18N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B

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HGTG18N120BN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand
wwwS.Dhaotrat CShirecueitt4WUi.tchostmand
Time
Time
(Note
(Note
3)
3)
at
at
VGE
VGE
=
=
15V
12V
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.tSC
.tSC
HGTG18N120BN
1200
54
26
160
±20
±30
100A at 1200V
390
3.12
125
-55 to 150
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 25A, L = 400µH, TJ = 25oC.
3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 1200V
TC = 25oC
TC = 125oC
TC = 150oC
IC = 18A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 150µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
IC = 18A, VCE = 600V
IC = 18A,
VCE = 600V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 18A
VCE = 960V
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 18)
Turn-Off Energy (Note 4)
EOFF
MIN
1200
15
-
-
-
-
-
6.0
-
100
TYP
-
-
-
250
-
2.45
3.8
7.0
-
-
MAX
-
-
250
-
3
2.7
4.2
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
- 10.5 -
V
- 165 200 nC
- 220 250 nC
- 23 28 ns
- 17 22 ns
- 170 200 ns
-
90 140
ns
- 0.8 1.0 mJ
- 1.9 2.4 mJ
- 1.8 2.2 mJ
©2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B

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HGTG18N120BN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 18A
VCE = 960V
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 18)
- 21 26 ns
- 17 22 ns
- 205 240 ns
- 140 200 ns
- 0.85 1.1
mJ
Turn-On Energy (Note 5)
EON2
- 3.7 4.9 mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
- 2.6 3.1 mJ
-
-
0.32
oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero
www.DatoafSPhoeweetr4DU.ecvoicme Turn-Off Switching Loss. This test
(ICE = 0A). All devices were tested per JEDEC Standard
method produces the true total Turn-Off Energy Loss.
No.
24-1
Method
for
Measurement
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
120 TJ = 150oC, RG = 3, VGE = 15V, L = 200µH
50 100
40 80
30 60
20 40
10 20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3, L = 1mH, VCE = 960V
TC = 75oC, VGE = 15V, IDEAL DIODE
100
50
30 VCE = 960V, RG = 3, TJ = 125oC
25
ISC
20
300
250
200
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.32oC/W, SEE NOTES
TC
75oC
75oC
110oC
110oC
1
5 10 20
VGE
15V
12V
15V
12V
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
15 150
tSC
10 100
5 50
12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG18N120BN Rev. B