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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
www.DataShCeaept4aUb.lceoomf Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF18090B
MRF18090BS
1.90 – 1.99 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
(NI–880)
(MRF18090B)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465C–02, STYLE 1
(NI–880S)
(MRF18090BS)
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
© MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF18090B MRF18090BS
1

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
www.Da(tVaDSShe=e1t04UV.dcco,mID = 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 – 1990 MHz)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
VGS(Q)
2.5
3.7
4.5
Vdc
VDS(on)
0.1
Vdc
gfs — 7.2 — S
Crss — 4.2 — pF
Gps dB
12 13.5 —
η%
40 45 —
IRL dB
— — –10
Output Mismatch Stress
Ψ No Degradation In Output Power
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
MRF18090B MRF18090BS
2
MOTOROLA RF DEVICE DATA

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R1
R2 T1
R3 R4
R5
VGG
C1 C2
RF
INPUT Z1
Z3
Z4
Z5 Z6
R6
C6
Z2
www.DataSheet4U.com
C1
C2
C3, C4
C5
C6, C7
R1
R2, R3, R6
R4
R5
T1
Z1
1.0 mF Chip Capacitor (0805)
1.0 nF Chip Capacitor (0805)
6.8 pF, 100B Chip Capacitors
220 mF, 50 V Electrolytic Capacitor
12 pF, 100B Chip Capacitors
2.2 kW Chip Resistor (0805)
1.0 kW Chip Resistors (0805)
10 kChip Resistor (0805)
6.8 kChip Resistor (0805)
BC847 SOT–23
0.85x 0.09Microstrip
Z8
VDD
+
C3 C4
C5
Z7
DUT
RF
Z9 Z10 OUTPUT
C7
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
PCB
Printed Inductance
Printed Inductance (Butterfly)
0.70x 0.09Microstrip
0.36x 0.09Microstrip
0.21x 1.25Microstrip
0.45x 1.18Microstrip
1.37x 0.05Microstrip
0.39x 0.09Microstrip
1.25x 0.09Microstrip
Teflon® Glass
Figure 1. 1.93 – 1.99 MHz Test Fixture Schematic
VBIAS
R3 R5
R2
R1 T1 R4
C1 C2
R6
C3 C4
C5
VSUPPLY
C6 C7
Ground
MRF18090B
Ground
Figure 2. 1.93 – 1.99 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18090B MRF18090BS
3

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ÏÏÏT1ÏÏÏT1 ÏÏÏ R1
C1
R6
R2
C2
R5
R3
T2
R4
C3
C4
www.DataSheet4U.com
RF
INPUT
Z1
C8
Z2
+
C5
VSUPPLY
C6
C7
RF
C9 Z4 OUTPUT
Z3
C10
C1, C3
C2
C4
C5
C6, C7
C8, C9, C10
R1
R2, R3
R4
1 mF Chip Capacitors (0805)
0.1 mF Chip Capacitor (0805)
1 nF Chip Capacitor (0805)
220 mF, 50 V Electrolytic Capacitor
8.2 pF, 100A Chip Capacitors
22 pF, 100A Chip Capacitors
10 Chip Resistor (0805)
1 kChip Resistors (0805)
2.2 kChip Resistor (0805)
R5 10 kChip Resistor (0603)
R6 5 k, SMD Potentiometer
T1 LP2951 Micro–8 Voltage Regulator
T2 BC847 SOT–23 NPN Transistor
Z1 0.491x 0.110Microstrip
Z2 0.756x 1.260Microstrip
Z3 1.433x 1.260Microstrip
Z4 0.567x 0.110Microstrip
Substrate = 0.5 mm Teflon® Glass
Figure 3. 1.93 – 1.99 GHz Demo Board Schematic
VSUPPLY
Ground
C1 R1 T 1 C2
R2
R3 R4
R5
T2 R6 C3
ÏÏÏÏÏÏÏÏÏÏÏÏC8 C4
C5
C6
C7
C9
C10
ÏÏÏÏÏÏÏÏ
MRF18090B
Figure 4. 1.93 – 1.99 GHz Demo Board Component Layout
MRF18090B MRF18090BS
4
MOTOROLA RF DEVICE DATA

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TYPICAL CHARACTERISTICS
16
IDQ = 1000 mA
15
750 mA
14
13 500 mA
12
300 mA
11
10
0.1
VDD = 26 Vdc
f = 1990 MHz
1 10 100
Pout, OUTPUT POWER (WATTS)
www.DataSheet4U.com Figure 5. Power Gain versus
Output Power
1000
140
120
IDQ = 750 mA
f = 1990 MHz
100
Pin = 5 W
80
60 2 W
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
120
Pin = 5 W
100
80
60 2 W
VDD = 26 Vdc
40 IDQ = 750 mA
1W
20
0
1.91 1.93 1.95 1.97 1.99 2.01
f, FREQUENCY (GHz)
Figure 7. Output Power versus Frequency
16
14
120 60
h
100 50
Pout
80 40
60 30
40 20
VDD = 26 Vdc
20 IDQ = 750 mA 10
f = 1990 MHz
00
01 2 3 4 56
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
0
Gps
-5
12 -10
IRL
10 -15
8
6
1.88 1.90
1.92 1.94 1.96 1.98
f, FREQUENCY (GHz)
-20
VDD = 26 Vdc
IDQ = 750 mA
-25
2.00 2.02 2.04
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18090B MRF18090BS
5