MAX2010.pdf 데이터시트 (총 19 페이지) - 파일 다운로드 MAX2010 데이타시트 다운로드

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19-2930; Rev 0; 8/03
500MHz to 1100MHz Adjustable
RF Predistorter
General Description
The MAX2010 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expan-
sion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2010
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 500MHz to 1100MHz
frequency band. Higher frequencies of operation can
www.DbaetaaSchheieevt4eUd.cwoimth this IC’s counterpart, the MAX2009.
The MAX2010 is unique in that it provides up to 6dB of
gain expansion and 21° of phase expansion as the input
power is increased. The amount of expansion is config-
urable through two independent sets of control: one set
adjusts the gain expansion breakpoint and slope, while
the second set controls the same parameters for phase.
With these settings in place, the linearization circuit can
be run in either a static set-and-forget mode, or a more
sophisticated closed-loop implementation can be
employed with real-time software-controlled distortion
correction. Hybrid correction modes are also possible
using simple lookup tables to compensate for factors
such as PA temperature drift or PA loading.
The MAX2010 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
Applications
cdma2000™, GSM/EDGE, and iDEN Base Stations
Feed-Forward PA Architectures
Digital Baseband Predistortion Architectures
Military Applications
Features
o Up to 12dB ACPR Improvement*
o Independent Gain and Phase Expansion Controls
o Gain Expansion Up to 6dB
o Phase Expansion Up to 21°
o 500MHz to 1100MHz Frequency Range
o Exceptional Gain and Phase Flatness
o Group Delay <2.4ns (Gain and Phase Sections
Combined)
o ±0.03ns Group Delay Ripple Over a 100MHz Band
o Capable of Handling Input Drives Up to +23dBm
o On-Chip Temperature Variation Compensation
o Single +5V Supply
o Low Power Consumption: 75mW (typ)
o Fully Integrated into Small 28-Pin Thin QFN
Package
*Performance dependent on amplifier, bias, and modulation.
Ordering Information
PART
MAX2010ETI-T
TEMP RANGE
-40°C to +85°C
*EP = Exposed paddle.
PIN-PACKAGE
28 Thin QFN-EP*
Functional Diagram/
Pin Configuration
28 27 26 25 24 23 22
GND* 1
GND* 2
GAIN
CONTROL
21 VCCG
20 GND*
ING 3
19 PBRAW
GND* 4
GND* 5
MAX2010
18 PBEXP
17 PBIN
OUTP 6
GND* 7
PHASE
CONTROL
16 GND*
15 VCCP
8 9 10 11 12 13 14
cdma2000 is a trademark of Telecommunications Industry
Assoc.
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

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500MHz to 1100MHz Adjustable
RF Predistorter
ABSOLUTE MAXIMUM RATINGS
VCCG, VCCP to GND ..............................................-0.3V to +5.5V
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (VCCG + 0.3V)
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND ............................-0.3V to (VCCP + 0.3V)
Input (ING, INP, OUTP, OUTG) Level ............................+23dBm
PBEXP Output Current ........................................................±1mA
Continuous Power Dissipation (TA = +70°C)
28-Pin Thin QFN-EP
(derate 21mW/°C above +70°C) ...............................1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
www.DopaetraaStiohneoeft4thUe.cdeovmice at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit; VCCG = VCCP = +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
50. VPF_S1 = open; PBEXP shorted to PBRAW; VPDCS1 = VPDCS2 = 0.8V; VPBIN = VGBP = VGCS = GND; VGFS = VCCG; TA = -40°C to
+85°C. Typical values are at VCCG = VCCP = +5.0V, TA = +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
Analog Input Voltage Range
Analog Input Current
Logic-Input High Voltage
Logic-Input Low Voltage
Logic Input Current
CONDITIONS
VCCG, VCCP
VCCP
VCCG
PBIN, PBRAW
GBP, GFS, GCS
VGFS = VGCS = VPBRAW = 0V
VGBP = 0 to +5V
VPBIN = 0 to +5V
PDCS1, PDCS2 (Note 1)
PDCS1, PDCS2 (Note 1)
MIN
4.75
0
0
-2
-100
-100
2.0
-2
TYP
5.8
10
MAX
5.25
7
12.1
VCCP
VCCG
+2
+170
+220
0.8
+2
UNITS
V
mA
V
µA
V
V
µA
2 _______________________________________________________________________________________

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500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit, VCCG = VCCP = +4.75V to +5.25V, 50environment, PIN = -20dBm, fIN = 500MHz to 1100MHz, VGCS = +1.0V,
VGFS = +5.0V, VGBP = +1.2V, VPBIN = VPDCS1 = VPDCS2 = 0V, VPF_S1 = +5V, VPBRAW = VPBEXP, TA = -40°C to +85°C. Typical val-
ues are at fIN = 880MHz, VCCG = VCCP = +5V, TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Operating Frequency Range
VSWR
PHASE CONTROL SECTION
Nominal Gain
www.DGataainShVeaerita4tUio.ncoOmver Temperature
Gain Flatness
CONDITIONS
ING, INP, OUTG, OUTP
TA = -40°C to +85°C
Over a 100MHz band
Phase-Expansion Breakpoint
Maximum
VPBIN = +5V
Phase-Expansion Breakpoint
Minimum
VPBIN = 0V
Phase-Expansion Breakpoint
Variation Over Temperature
TA = -40°C to +85°C
MIN TYP MAX UNITS
500 1100 MHz
1.3:1
-5.5
-1.7
±0.1
23
dB
dB
dB
dBm
0.7 dBm
±1.5 dB
VPF_S1 = +5V,
VPDCS1 = VPDCS2 = 0V,
PIN = -20 dBm to +23 dBm
21
Phase Expansion
VPDCS1 = 5V,
VPDCS2 = 0V,
VPF_S1 = +1.5V
VPDCS1 = 0V,
VPDCS2 = 5V,
VPF_S1 = +1.5V
16
Degrees
14
Phase-Expansion Slope
Maximum
VPF_S1 = 0V,
VPDCS1 = VPDCS2 = +5V,
PIN = -20dBm to +23dBm
PIN = +9dBm
6
1.4 Degrees
/dB
VPF_S1 = 0V,
Phase-Expansion Slope Minimum VPDCS1 = VPDCS2 = +5V,
PIN = +9dBm
Phase-Slope Variation Over
Temperature
PIN = +9dBm, TA = -40°C to +85°C
Phase Ripple
Noise Figure
Absolute Group Delay
Group Delay Ripple
Parasitic Gain Expansion
Over a 100MHz band, deviation from linear phase
Interconnects de-embedded
Over a 100MHz band
PIN = -20dBm to +23dBm
0.6
0.05
±0.02
5.5
1.3
±0.01
+0.4
Degrees
/dB
Degrees
/dB
Degrees
dB
ns
ns
dB
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500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, VCCG = VCCP = +4.75V to +5.25V, 50environment, PIN = -20dBm, fIN = 500MHz to 1100MHz, VGCS = +1.0V,
VGFS = +5.0V, VGBP = +1.2V, VPBIN = VPDCS1 = VPDCS2 = 0V, VPF_S1 = +5V, VPBRAW = VPBEXP, TA = -40°C to +85°C. Typical val-
ues are at fIN = 880MHz, VCCG = VCCP = +5V, TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
GAIN CONTROL SECTION
CONDITIONS
Nominal Gain
www.DGataainShVeaerita4tiUo.ncoOmver Temperature
Gain Flatness
VGCS = 0V, VGFS = +5V
VGCS = +5V, VGFS = 0V
TA = -40°C to +85°C
Over a 100MHz band
MIN TYP MAX UNITS
-14.9
-24.3
-7.6
-1.4
±0.2
dB
dB
dB
Gain-Expansion Breakpoint
Maximum
VGBP = +5V
23 dBm
Gain-Expansion Breakpoint
Minimum
VGBP = +0.5V
-2.5 dBm
Gain-Expansion Breakpoint
Variation Over Temperature
Gain-Expansion
Gain-Expansion Slope
Gain-Slope Variation Over
Temperature
Noise Figure
Absolute Group Delay
Group Delay Ripple
Phase Ripple
Parasitic Phase Expansion
TA = -40°C to +85°C
VGFS = +5V, PIN = -20dBm to +23dBm
VGFS = 0V, PIN = -20dBm to +23dBm
VGFS = +5V, PIN = +15dBm
VGFS = +0V, PIN = +15dBm
PIN = +15dBm, TA = -40°C to +85°C
Interconnects de-embedded
Over a 100MHz band
Over a 100MHz band, deviation from linear phase
PIN = -20dBm to +23dBm
-0.5
5.3
3.1
0.43
0.23
-0.01
14.9
1.12
±0.02
±0.09
+3
dB
dB
dB/dB
dB/dB
dB
ns
ns
Degrees
Degrees
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise
noted.
4 _______________________________________________________________________________________

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500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics
Phase Control Section
(MAX2010 EV kit, VCCP = +5.0V, PIN = -20dBm, VPBIN = 0V, VPF_S1 = +5.0V, VPDCS1 = VPDCS2 = 0V, fIN = 880MHz, TA = +25°C
unless otherwise noted.)
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
6.6
6.5
6.4
www.Data6S.3heet4U.com
TA = +85°C
6.2
6.1
TA = +25°C
6.0
5.9
TA = -40°C
5.8
5.7
5.6
4.75
4.85 4.95 5.05 5.15
SUPPLY VOLTAGE (V)
5.25
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
0
10
20 C
30
D
40
BA
50
0.5 0.6 0.7 0.8 0.9 1.0
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
1.1
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
0
10
20 B
30
A
DC
40
50
0.5 0.6 0.7 0.8 0.9 1.0
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
1.1
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
0
10
B
A
20
30
D
40
C
50
0.5 0.6 0.7 0.8 0.9 1.0
FREQUENCY (GHz)
PIN = +15dBm
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
1.1
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
0
10 B A
20
30 D C
40
50
0.5 0.6 0.7 0.8 0.9 1.0
FREQUENCY (GHz)
PIN = +15dBm
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
1.1
SMALL-SIGNAL GAIN
vs. FREQUENCY
-4.0
-4.5
-5.0 TA = -40°C
-5.5 TA = +25°C
-6.0 TA = +85°C
-6.5
-7.0
0.5 0.6 0.7 0.8 0.9 1.0 1.1
FREQUENCY (GHz)
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