IXTV30N60PS.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXTV30N60PS 데이타시트 다운로드

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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Advanced Technical Information
www.DataSheet4U.com
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
VDSS = 600 V
ID25 = 30 A
RDS(on) 240 m
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TO-247 (IXFH)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
600 V
600 V
±30 V
±40 V
G
DS
TO-3P (IXTQ)
30 A
80 A
30 A
50 mJ G
1.5 J
DS
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
10
500
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body FOR 10 seconds
300
260
V/ns
PLUS220 (IXFV)
W
°C
°C
°C
G
DS
°C PLUS220 (IXFV...S)
°C
Mounting torque (TO-3P)
1.13/10 Nm/lb.in.
TO-247
TO-3P
PLUS220
TO-268
6.0 g
5.5 g
4.0 g
G
S
5.0 g TO-268 (IXTT)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
240 m
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
© 2005 IXYS All rights reserved
DS99251B(02/05)

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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
22 25
S
5050
540
53
pF
pF
pF
29 ns
20 ns
80 ns
25 ns
82 nC
28 nC
30 nC
0.19 K/W
0.21 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
30 A
80 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V
410 ns
4.0 µC
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6.5V
6V
5.5V
5V
1234567
VD S - Volts
8
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55 VGS = 10V
50 8V
7V
45
40
6.5V
35
30
25
20 6V
15
10 5.5V
5 5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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30
27
24
21
18
15
12
9
6
3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14 16 18
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs . ID
3
2.8
VGS = 10V
2.6
TJ = 125C
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25C
1
0.8
0
5 10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
Fig. 7. Input Adm ittance
35
30
25
20
15
10 TJ = 125C
25C
5 -40C
0
3.5 4 4.5 5 5.5 6 6.5 7
VG S - Volts
© 2005 IXYS All rights reserved
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.4
3.1 VGS = 10V
2.8
2.5
2.2
1.9 ID = 30A
1.6
1.3 ID = 15A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
35
30
25
20
15
10
5
0
-50
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 8. Transconductance
50
45
40
35 TJ = -40C
25C
30 125C
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
I D - Amperes

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90
80
70
60
50
40
30
20
10
0
0.4
Fig. 9. Source Current vs.
Source-To-Drain Voltage
TJ = 125C
TJ = 25C
0.5 0.6 0.7 0.8 0.9
VS D - Volts
1
1.1
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
Fig. 10. Gate Charge
10
9 VDS = 250V
8 ID = 15A
7 IG = 10mA
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70
Q G - nanoCoulombs
10000
1000
Fig. 11. Capacitance
Ciss
Fig. 12. Forw ard-Bias
Safe Operating Area
100
RDS(on) Limit
25µs
Coss
10
100
f = 1MHz
10
0
5 10
Crs
TJ = 150C
DC
TC = 25C
1
15
VD S
20 25
- Volts
Fig3. 013. M3a5ximu4m0
Transient
The1r0mal Resistance
100
VD S - Volts
100µs
1ms
10m s
1000
1.00
0.10
0.01
0.1 1 10
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
100
1000

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Package Outline Drawings
TO-247AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXTT) Outline
© 2005 IXYS All rights reserved
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
TO-3P (IXTQ) Outline
PLUS220 (IXTV) Outline
E
E1
L2
A
A1
E1
D
L3
L1
L
D1
2X e
3X b
c
A2
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3