IXTV30N60PS.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IXTV30N60PS 데이타시트 다운로드

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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Advanced Technical Information
www.DataSheet4U.com
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
VDSS = 600 V
ID25 = 30 A
RDS(on) 240 m
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TO-247 (IXFH)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
600 V
600 V
±30 V
±40 V
G
DS
TO-3P (IXTQ)
30 A
80 A
30 A
50 mJ G
1.5 J
DS
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
10
500
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body FOR 10 seconds
300
260
V/ns
PLUS220 (IXFV)
W
°C
°C
°C
G
DS
°C PLUS220 (IXFV...S)
°C
Mounting torque (TO-3P)
1.13/10 Nm/lb.in.
TO-247
TO-3P
PLUS220
TO-268
6.0 g
5.5 g
4.0 g
G
S
5.0 g TO-268 (IXTT)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
240 m
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
© 2005 IXYS All rights reserved
DS99251B(02/05)

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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
22 25
S
5050
540
53
pF
pF
pF
29 ns
20 ns
80 ns
25 ns
82 nC
28 nC
30 nC
0.19 K/W
0.21 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
30 A
80 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V
410 ns
4.0 µC
30
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6.5V
6V
5.5V
5V
1234567
VD S - Volts
8
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55 VGS = 10V
50 8V
7V
45
40
6.5V
35
30
25
20 6V
15
10 5.5V
5 5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692

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30
27
24
21
18
15
12
9
6
3
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14 16 18
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs . ID
3
2.8
VGS = 10V
2.6
TJ = 125C
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25C
1
0.8
0
5 10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
Fig. 7. Input Adm ittance
35
30
25
20
15
10 TJ = 125C
25C
5 -40C
0
3.5 4 4.5 5 5.5 6 6.5 7
VG S - Volts
© 2005 IXYS All rights reserved
IXTH 30N60P IXTQ 30N60P
IXTT 30N60P IXTV 30N60P
www.DataSheet4U.com
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.4
3.1 VGS = 10V
2.8
2.5
2.2
1.9 ID = 30A
1.6
1.3 ID = 15A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
35
30
25
20
15
10
5
0
-50
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 8. Transconductance
50
45
40
35 TJ = -40C
25C
30 125C
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
I D - Amperes