MWE6IC9080GNR1.pdf 데이터시트 (총 19 페이지) - 파일 다운로드 MWE6IC9080GNR1 데이타시트 다운로드

No Preview Available !

Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
www.DRaetavS.he0e,t44U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Typical GSM
630 mA, Pout
P=e8r0foWrmaattnsceC:WVDD
=
28
Volts,
IDQ1
=
230
mA,
IDQ2
=
Frequency
Gps
(dB)
PAE
(%)
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
29.0 49.7
940 MHz
28.8 51.6
960 MHz
28.5 52.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
Typical Pout @ 1 dB Compression Point 90 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
920 MHz 30.0 37.0
940 MHz 30.0 37.8
960 MHz 29.5 38.0
Features
--62
--62
--62
--75 0.8
--75 1.2
--75 1.5
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
VVGGSS12
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TC
TJ
Pin
Symbol
RθJC
www.DataSheet4U.com
Value
Unit
--0.5, +66
Vdc
--0.5, +6
Vdc
--65 to +150
°C
150 °C
225 °C
20.5 dBm
Value (2,3)
Unit
°C/W
GSM Application
(Case Temperature 80°C,
Pout = 80 W CW, 940 MHz)
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.5
0.52
GSM EDGE Application
(Case Temperature 80°C,
Pout = 40 W CW, 940 MHz)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.6
0.54
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 33 μAdc)
VGS(th)
1.5
2
3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 230 mAdc)
VGS(Q)
2.7
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 230 mAdc, Measured in Functional Test)
VGG(Q)
15
17
19 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
2
RF Device Data
Freescale Semiconductor

No Preview Available !

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
www.DataSheet4U.com
Typ Max Unit
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
Stage 2 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1.5
2
3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 630 mAdc)
VGS(Q)
2.7
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 630 mAdc, Measured in Functional Test)
VGG(Q)
16.5
18.5
20.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.45
0.8
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 80 W CW, IDQ1 = 230 mA, IDQ2 = 630 mA, f = 960 MHz
Power Gain
Gps 27.0 28.5 30.5 dB
Power Added Efficiency
PAE 48.0 52.3
%
Input Return Loss
IRL
--28 --10
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 80 W CW, IDQ1 = 230 mA,
IDQ2 = 630 mA
Frequency
Gps
(dB)
PAE
(%)
IRL
(dB)
920 MHz
29.0 49.7 --24
940 MHz
28.8 51.6 --28
960 MHz
28.5 52.3 --28
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 230 mA, IDQ2 = 630 mA, 920--960 MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max Unit
Pout @ 1 dB Compression Point, CW
P1dB
90
W
IMD Symmetry @ 100 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
IMDsym
MHz
— 28 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
30
— MHz
Quiescent Current Accuracy over Temperature (2)
with 4.12 kGate Feed Resistors (--30 to 85°C)
Stage 1
Stage 2
IQT
2.6
2.6
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 80 W CW
Gain Variation over Temperature
(--30°C to +85°C)
GF — 0.7 — dB
G — 0.039 — dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB — 0.008 — dBm/°C
1. Part internally matched both on input and output.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(continued)
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
3

No Preview Available !

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
www.DataSheet4U.com
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35 W Avg., IDQ1 =
230 mA, IDQ2 = 630 mA, 920--960 MHz EDGE Modulation
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz
30.0 37.0
--62
--75 0.8
940 MHz
30.0 37.8
--62
--75 1.2
960 MHz
29.5 38.0
--62
--75 1.5
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
4
RF Device Data
Freescale Semiconductor

No Preview Available !

VDS1
C17
C22
www.DataSheet4U.com
C7
C8
C11
MWE6IC9080N
Rev. 2
C14
C13
R1
C15
VGS1
C16 R2
C12
C19
VGS2
C18
VDS1
VDS2
C20
C1 C24
C3
C23
C4
C2 C5 C6 C25
C21 VDS2
C10
C9
*C6 is mounted vertically.
Figure 3. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
C1, C2
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
C3, C4
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
C5, C7, C8, C9, C10, C11, C12,
C13, C14
33 pF Chip Capacitors
ATC100B330JT500XT
C6
4.3 pF Chip Capacitor
ATC100B4R3CT500XT
C15, C16, C17, C18, C19, C20,
C21
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
C22, C23
470 μF, 63 V Electrolytic Capacitors, Radial
MCGPR63V477M13X26--RH
C24
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
C25
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
R1, R2
4.12 K, 1/4 W Chip Resistors
CRCW12064K12FKEA
PCB
0.030, εr = 2.8
IS680–280
Manufacturer
ATC
ATC
ATC
ATC
Murata
Multicomp
ATC
ATC
Vishay
Isola
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
5