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SSM6K24FE
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K24FE
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance: Ron = 145m(max) (@VGS = 4.5 V)
Ron = 180m(max) (@VGS = 2.5 V)
Unit: mm
1.6±0.05
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
16
25
Characteristics
Drain-Source voltage
Symbol
VDS
Rating
30
Unit
V
34
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
Pulse
ID
IDP
0.5
A
1.5
Drain power dissipation
Channel temperature
PD 500 mW
(Note 1)
Tch 150 °C
1,2,5,6 :Drain
3 :Gate
4 :Source
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
ES6
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
2-2N1A
absolute maximum ratings.
Weight: 3.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
65
4
Equivalent Circuit (top view)
654
NF
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1 2007-11-01

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Electrical Characteristics (Ta = 25°C)
SSM6K24FE
www.DataSheet4U.com
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±12 V, VDS = 0
⎯ ⎯ ±1 μA
V (BR) DSS
V (BR) DSX
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = −12 V
30 ⎯ ⎯
18 ⎯ ⎯
V
IDSS
VDS = 30 V, VGS = 0
⎯ ⎯ 1 μA
Vth VDS = 3 V, ID = 0.1 mA
0.5 1.1 V
Yfs
VDS = 3 V, ID = 0.25 A
(Note2) 1.0
2.0
S
RDS (ON)
ID = 0.50 A, VGS = 4.5 V
ID = 0.25 A, VGS = 2.5 V
(Note2)
(Note2)
120 145
mΩ
140 180
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
245
pF
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
33 pF
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
41 pF
ton VDD = 10 V, ID = 0.25 A,
toff VGS = 0~2.5 V, RG = 4.7 Ω
9
ns
15
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
IN
0
10 μs
VDD = 10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
VDD (c) VOUT
2.5 V
0V
VDD
VDS (ON)
10%
90%
10%
90%
tr
tf
ton toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration when using the device.
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1600
1400
1200
1000
800
600
400
200
0
0
ID - VDS
1.8
2.0
3.0
4.0
5.0
1.6
VGS=1.4V
Common Source
Ta=25°C
0.2 0.4 0.6 0.8
Drain-Source voltage VDS (V)
1
200
180
160
140
120
100
80
60
40
20
0
0
RDS(ON) - ID
Common Source
Ta=25°C
2.5V
VGS=4.5V
200 400 600 800 1000 1200 1400 1600
Drain current ID (mA)
10000
SSM6K24FE
www.DataSheet4U.com
ID - VGS
1000
100
Ta=100°C
10
1
0.1
0.01
0
25°C
-25°C
Common Source
VDS=3V
Gate-S1ource voltage 2VGS (V)
3
RDS(ON) - VGS
400
Common Source
350 ID=500mA
300
250
200
25°C
150 Ta=100°C
100
-25°C
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-Source voltage VGS (V)
RDS(ON) - Ta
400
Common Source
350
300
250
2.5V,250m A
200
150
100 VGS=4.5V,ID=500mA
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
Vth - Ta
1
Common Source
ID=0.1m A
0.8 VDS=3V
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2007-11-01