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SSM6K24FE
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K24FE
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance: Ron = 145m(max) (@VGS = 4.5 V)
Ron = 180m(max) (@VGS = 2.5 V)
Unit: mm
1.6±0.05
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
16
25
Characteristics
Drain-Source voltage
Symbol
VDS
Rating
30
Unit
V
34
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
Pulse
ID
IDP
0.5
A
1.5
Drain power dissipation
Channel temperature
PD 500 mW
(Note 1)
Tch 150 °C
1,2,5,6 :Drain
3 :Gate
4 :Source
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
ES6
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
2-2N1A
absolute maximum ratings.
Weight: 3.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
65
4
Equivalent Circuit (top view)
654
NF
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
SSM6K24FE
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Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±12 V, VDS = 0
⎯ ⎯ ±1 μA
V (BR) DSS
V (BR) DSX
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = −12 V
30 ⎯ ⎯
18 ⎯ ⎯
V
IDSS
VDS = 30 V, VGS = 0
⎯ ⎯ 1 μA
Vth VDS = 3 V, ID = 0.1 mA
0.5 1.1 V
Yfs
VDS = 3 V, ID = 0.25 A
(Note2) 1.0
2.0
S
RDS (ON)
ID = 0.50 A, VGS = 4.5 V
ID = 0.25 A, VGS = 2.5 V
(Note2)
(Note2)
120 145
mΩ
140 180
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
245
pF
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
33 pF
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
41 pF
ton VDD = 10 V, ID = 0.25 A,
toff VGS = 0~2.5 V, RG = 4.7 Ω
9
ns
15
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
IN
0
10 μs
VDD = 10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
VDD (c) VOUT
2.5 V
0V
VDD
VDS (ON)
10%
90%
10%
90%
tr
tf
ton toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration when using the device.
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1600
1400
1200
1000
800
600
400
200
0
0
ID - VDS
1.8
2.0
3.0
4.0
5.0
1.6
VGS=1.4V
Common Source
Ta=25°C
0.2 0.4 0.6 0.8
Drain-Source voltage VDS (V)
1
200
180
160
140
120
100
80
60
40
20
0
0
RDS(ON) - ID
Common Source
Ta=25°C
2.5V
VGS=4.5V
200 400 600 800 1000 1200 1400 1600
Drain current ID (mA)
10000
SSM6K24FE
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ID - VGS
1000
100
Ta=100°C
10
1
0.1
0.01
0
25°C
-25°C
Common Source
VDS=3V
Gate-S1ource voltage 2VGS (V)
3
RDS(ON) - VGS
400
Common Source
350 ID=500mA
300
250
200
25°C
150 Ta=100°C
100
-25°C
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-Source voltage VGS (V)
RDS(ON) - Ta
400
Common Source
350
300
250
2.5V,250m A
200
150
100 VGS=4.5V,ID=500mA
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
Vth - Ta
1
Common Source
ID=0.1m A
0.8 VDS=3V
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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|Yfs| - ID
10
25°C
-25°C
Ta=100°C
1
Common Source
VDS=3V
Ta=25°C
0
10
100
1000
10000
Drain current ID (mA)
1000
100
C - VDS
Common Source
VGS=0V
f =1MHz
Ta=25°C
Ciss
10
0.1
Coss
Crs s
1 10
Drain-Source voltage VDS (V)
100
SSM6K24FE
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1600
1400
1200
1000
800
600
IDR - VDS
Common Source
VGS=0V
Ta=25°C
D
G IDR
S
400
200
0
0
-0.2 -0.4 -0.6 -0.8
Drain-Source voltage VDS (V)
-1
1000
100
10
1
10
t - ID
Common Source
VDD=10V
VGS=0~2.5V
Ta=25°C
toff
tf
ton
tr
100 1000
Drain current ID (mA)
10000
1000
800
PD - Ta
mounted FR4 board
(25.4mm*25.4mm*1.6t
Cu Pad :645mm2)
600
DC
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta()
4
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SSM6K24FE
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RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5 2007-11-01