TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V)
Ron = 180mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Drain power dissipation
PD 500 mW
Tch 150 °C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 3.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Equivalent Circuit (top view)
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.