SSM6P25TU.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 SSM6P25TU 데이타시트 다운로드

No Preview Available !

SSM6P25TU
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P25TU
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance: Ron = 260m(max) (@VGS = -4 V)
Ron = 430m(max) (@VGS = -2.5 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
16
25
34
Drain-Source voltage
VDS -20 V
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
Pulse
Drain power dissipation
ID
-0.5
A
IDP -1.5
PD 500 mW
(Note 1)
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
55~150
°C
UF6
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
2-2T1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
654
Equivalent Circuit (top view)
654
PH
Q1
Q2
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1 2007-11-01

No Preview Available !

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
SSM6P25TU
www.DataSheet4U.com
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ± 12V, VDS = 0
⎯ ⎯ ±1 μA
V (BR) DSS
V (BR) DSX
ID = -1 mA, VGS = 0
ID = -1 mA, VGS = +12 V
-20
-8
V
IDSS
VDS = -20 V, VGS = 0
⎯ ⎯ -1 μA
Vth VDS = -3 V, ID = -0.1 mA
-0.5 -1.1 V
Yfs
VDS = -3 V, ID = -0.25 A
(Note2) 0.65 1.3
S
RDS (ON)
ID = -0.25 A, VGS = -4 V
ID = -0.25 A, VGS = -2.5 V
(Note2)
(Note2)
210 260
mΩ
310 430
Ciss VDS = -10 V, VGS = 0, f = 1 MHz
218
pF
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
42 pF
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
52 pF
ton VDD = -10 V, ID = -0.25 A,
toff VGS = 0~-2.5 V, RG = 4.7 Ω
16
ns
15
Switching Time Test Circuit
(a) Test circuit
0 IN
2.5V
10 μs
VDD = -10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
RL
VDD
(b) VIN
0V
(c) VOUT
2.5 V
VDS (ON)
VDD
10%
90%
90%
10%
tr
tf
ton toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
2 2007-11-01

No Preview Available !

-1600
-1400
-1200
-1000
-800
-600
-400
-200
0
0
ID - VDS
-5.0 -3.0
-4.0
-2.0
-1.8
VGS=-1.6
Common Source
Ta=25°C
-0.2 -0.4 -0.6 -0.8
Drain-Source voltage VDS (V)
-1
RDS(ON) - ID
500
400
-2.5V
300
200 VGS=-4V
100
0
0
Common Source
Ta=25°C
-200 -400 -600 -800 -1000 -1200 -1400 -1600
Drain current ID (mA)
-10000
SSM6P25TU
www.DataSheet4U.com
ID - VGS
-1000
-100
-10 Ta=100°C
-1
- 0.1
- 0.01
0
-
25°
-25°C
Common Source
VDS=-3V
-1 -2
Gate-Source voltage VGS (V)
-3
RDS(ON) - VGS
500
Common Source
ID=-250m A
400
300
200 Ta=100°C
25°C
100 -25°C
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
500 RDS(ON) - Ta
Common Source
ID=-250m A
400
-2.5V
300
VGS=-4V
200
100
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
-1 Vth - Ta
-0.8
-0.6
-0.4
-0.2 Common Source
ID=-0.1m A
VDS=-3V
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2007-11-01