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Schottky barrier diode
RB205T-60
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
205
6
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Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 60
VR 60
Io 15
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg -40 to +150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.58
IR - - 600
jc - - 2
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
IF=7.5A
VR=60V
junction to case
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2010.03 - Rev.D

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RB205T-60
 
Electrical characteristic curves
10
Ta=150C
Ta=125C
1
Ta=75°
Ta=25C
Ta=-25C
0.1
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
700
100000
10000
1000
100
10
1
0.1
0.01
0
Ta=150C
Ta=125C
Ta=75
Ta=25C
Ta=-25C
10 20 30 40 50
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
60
10000
1000
100
10
1
0
560 200 1350
Ta=25C
IF=7.5A
180
Ta=25C
VR=60V
1340
550
n=30pcs
160
n=30pcs
1330
140 1320
540 120 1310
100 1300
530 80 1290
AVE:537.0mV
60
1280
520 40 1270
20 AVE:40.6uA
1260
510 0 1250
VF DISPERSION MAP
IR DISPERSION MAP
Data Sheet
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f=1MHz
10 20
REVERSE VOLTAGE : STICS
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
AVE:1290.5pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm 1cyc
8.3ms
AVE:168.0A
IFSM DISPERSION MAP
Ifsm
t
30
Ta=25C
25 IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5 AVE:16.0ns
0
trr DISPERSION MAP
100 Mounted on epoxy board
IM=100mA
IF=7.5A
time
300us
10 1ms
Rth(j-a)
1 Rth(j-c)
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
D=1/
2
DC
Sin(180)
10
10
1
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
0.1
0.001
0
0.1
10
1000
0 5 10 15 20 25
TIME : t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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RB205T-60
  Data Sheet
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5
4
3
2
1
0
0
30
25
20
15
10
5
0
DC
D=1/2
Sin(θ=180)
20 40
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
60
No break at 30kV
AVE:15.6kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
40
30
DC
20 D=1/2
0A Io
0V
t
VR
D=t/T
VR=30V
T Tj=150
Sin(θ=180)
10
40
30
DC
20 D=1/2
10 Sin(θ=180)
0A Io
0V
t
VR
D=t/T
T TVj=R=15300V
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
0
0 25 50 75 100 125 150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
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R1010A